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參數(shù)資料
| 型號： | HMMC-5220 |
| 英文描述： | DC-15 GHz Feedback Amplifier(DC-15 GHz反饋放大器) |
| 中文描述： | 的DC - 15 GHz的反饋放大器（的DC - 15 GHz的反饋放大器） |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 39K |
| 代理商： | HMMC-5220 |
3
Applications
The HMMC-5220 can be used
for a variety of applications
requiring moderate amounts of
gain and low power dissipation
in a 50
system.
Biasing and Operation
The HMMC-5220 can be operated
from a single positive supply. This
supply must be connected to two
points on the chip, namely the V
cc
pad and the output pad. The
supply voltage may be directly
connected to the V
cc
pad as long
as the voltage is between +4.75 to
+7 volts; however, if the supply is
higher than +7 volts, a series
resistor (R
cc
) should be used to
reduce the voltage to the V
cc
pad.
See the bonding diagram for the
equation used to select R
cc
. In the
case of the output pad, the supply
voltage must be connected to the
output transmission line through
a resistor and an inductor. The
required value of the resistor is
given by the equation:
R
out
= 35.7V
supply
-114.3
,
where V
supply
is in volts. If R
out
is
greater than 300
, the inductor
may be omitted, however, the
amplifier’s gain may be reduced
by ~0.5 dB. Figure 4 shows a
recommended bonding strategy.
The chip contains a backside via
to provide a low inductance
ground path; therefore, the
ground pads on the IC should not
be bonded.
The voltage at the IN and OUT
pads of the IC will be approxi-
mately 3.2 Volts; therefore, DC
blocking caps should be used at
these ports.
Assembly Techniques
Solder die attach using a fluxless
gold-tin (AuSn) solder preform is
the recommended assembly
method. A conductive epoxy such
as ABLEBOND
71-1LM1 or
ABLEBOND
36-2 may also be
used for die attaching provided
the Absolute Maximum Thermal
Ratings are not exceeded. The
device should be attached to an
electrically conductive surface to
complete the DC and RF ground
paths. Ground path inductance
should be minimized. The back-
side metallization on the device is
gold.
It is recommended that the RF
input and RF output connections
be made using 0.7 mil diameter
gold wire. The chip is designed to
operate with 0.1 – 0.3 nH of
inductance at the RF input and
output. This can be accomplished
by using 10 mil bond wire lengths
on the RF input and output. The
bias supply wire can be a 0.7 mil
diameter gold wire attached to
the V
CC
bonding pad.
Thermosonic wedge is the
preferred method for wire
bonding to the gold bond pads.
Mesh wires can be attached using
a 2 mil round tacking tool and a
tool force of approximately
22 grams with an ultrasonic
power of roughly 55 dB for a
duration of 76
±
8 msec. A guided
wedge at an ultrasonic power
level of 64 dB can be used for the
0.7 mil wire. The recom-mended
wire bond stage temperature is
150
±
2
°
C.
For more detailed information
see Agilent application note #999
“GaAs MMIC Assembly and
Handling Guidelines.”
GaAs MMICs are ESD sensitive.
Proper precautions should be used
when handling these devices.
Figure 1. HMMC-5220 Simplified Schematic Diagram.
In
GND
V
CC
GND
Out
GND
GND
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