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參數(shù)資料
| 型號(hào)： | HMMC-5038 |
| 英文描述： | 38 GHz Adjustable High-Gain Low-Noise Amplifier( 38 GHz 可調(diào)高增益低噪聲放大器) |
| 中文描述： | 38 GHz的可調(diào)節(jié)的高增益低噪聲放大器（38 GHz的可調(diào)高增益低噪聲放大器） |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 104K |
| 代理商： | HMMC-5038 |
2
DC Specifications/Physical Properties
[1]
Symbol
Parameters and Test Conditions
V
D1, 2-3-4
Low Noise Drain Supply Operating Voltages
Units
V
Min.
2
Typ.
3
Max.
5
I
D1
First Stage Drain Supply Current
(V
DD
= 3 V, V
G1
= -0.8 V)
mA
22
I
D2-3-4
Drain Supply Current for Stages 2, 3, and 4 Combined
(V
DD
= 3 V, V
GG
= -0.8 V)
mA
98
V
G1, 2, 3-4
Gate Supply Operating Voltages (I
DD
= 120 mA)
Pinch-off Voltage (V
DD
= 3 V, I
DD
≤
10 mA)
Thermal Resistance
[2]
(Channel-to-Backside @ T
ch
= 160
°
C)
Channel Temperature
[3]
(T
A
= 125
°
C, MTTF > 10
6
hrs,
V
DD
= 3 V, I
DD
= 120 mA)
V
-0.8
V
p
V
-2
-1.2
-0.8
θ
ch-bs
°
C/W
62
T
ch
°
C
150
Notes:
1. Backside ambient operating temperature T
A
= 25
°
C unless otherwise noted.
2. Thermal resistance (
°
C/Watt) at a channel temperature T (
°
C) can be
estimated
using the equation:
θ
(T)
62 x [T(
°
C)+ 273] / [160
°
C + 273].
3. Derate MTTF by a factor of two for every 8
°
C above T
ch
.
RF Specifications,
T
A
= 25
°
C, V
DD
= 3 V, I
DD
= 120 mA, Z
o
= 50
Symbol
Parameters and Test Conditions
BW
Operating Bandwidth
S
21
Small Signal Gain
[1]
S
21
Small Signal Gain Flatness
(RL
in
)
MIN
Minimum Input Return Loss w/o external
capacitive matching
[2]
(RL
out
)
MIN
Minimum Output Return Loss
S
12
Reverse Isolation
P
-1dB
Output Power @ 1dB Gain Compression
NF
Noise Figure
[3]
Units
GHz
dB
dB
dB
Min.
37
20
Typ.
Max.
40
23
±
0.5
12
8
dB
dB
dBm
dB
12
18
50
12
4.8
Notes:
1. Gain may be reduced by biasing for lower I
DD
. Increasing I
DD
will increase Gain.
2. Minimum input return may be improved by approximately 3 dB by including a small capacitive (~30 fF) stub on the
input transmission line.
3. Noise Figure may be further reduced by optimizing DC bias conditions.
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