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參數(shù)資料
| 型號(hào)： | HMMC-5034 |
| 英文描述： | 37-43 GHz MMIC Power Amplifier(37-43 GHz單片微波集成電路功率放大器) |
| 中文描述： | 37-43 GHz單片功率放大器（37-43 GHz的單片微波集成電路功率放大器） |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 185K |
| 代理商： | HMMC-5034 |
3
Figure 1. HMMC-5034 Simplified Schematic Diagram.
V
D1
V
D2
Det. Out
(Optional)
V
G2
(Optional)
V
G1
V
D1
(Optional)
V
D2
(Optional)
Det. Ref
V
G1
V
G2
Stage 1
Stage 2
C
RF Input
RF Output
R1
R1
D1
D2
Applications
The HMMC-5034 MMIC is a
broadband power amplifier
designed for use in communica-
tions transmitters that operate in
various frequency bands within
37 GHz and 42.5 GHz. It can be
attached to the output of the
HMMC-5040 increasing the power
handling capability of transmit-
ters requiring linear operation.
Biasing and Operation
The recommended DC bias
condition is with both drains (
V
D1
and V
D2
) connected to single 4.5
volt supply (
V
DD
) and both gates
(
V
G1
and V
G2
) connected to an
adjustable negative voltage
supply (
V
GG
) as shown in Figures
12 or 13. The gate voltage is
adjusted for a total drain supply
current of commonly 300 mA or
less.
The RF input and output ports are
AC-coupled.
An output power detector net-
work is also supplied. The
Det.Out
port provides a DC
voltage that is generated by the
RF power at the
RF-Output
port.
The
Det.Ref
pad provides a DC
reference voltage that can be
used to nullify the effects of
temperature variations on the
detected RF voltage. The differen-
tial voltage between the
Det.Ref
and
Det.Out
bonding pads can be
correlated to the RF power
emerging from the
RF-Output
port. A bond wire attaching both
V
D2
bond pads to the supply will
assure symmetric operation and
minimize any DC offset voltage
between
Det.Ref
and
Det.Out
(at
no RF output power).
No ground wires are needed be-
cause ground connections are
made with plated through-holes
to the backside of the device.
Assembly Techniques
Electrically and thermally con-
ductive epoxy die attach is the
preferred assembly method.
Solder die attach using a fluxless
gold-tin (AuSn) solder pre-form
can also be used. The device
should be attached to an electri-
cally conductive surface to
complete the DC and RF ground
paths. The backside metallization
on the device is gold.
It is recommended that the
electrical connections to the
bonding pads be made using 0.7-
1.0 mil diameter gold wire. The
microwave/millimeter-wave
connections should be kept as
short as possible to minimize
inductance. For assemblies
requiring long bond wires,
multiple wires can be attached to
the RF bonding pads.
Thermosonic wedge is the
preferred method for wire
bonding to the gold bond pads. A
guided-wedge at an ultrasonic
power level of 64 dB can be used
for the 0.7 mil wire. The recom-
mended wire bond stage tempera-
ture is 150
±
2
°
C.
For more detailed information
see Agilent application note #999,
“GaAs MMIC Assembly and
Handling Guidelines.”
GaAs MMICs are ESD sensitive.
Proper precautions should be used
when handling these devices.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMMC-5038 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:38 GHz LNA |
| HMMC-5040 | 制造商:Agilent Technologies 功能描述:RF AMP CHIP SGL GP 40GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5200 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GAIN AMP CHIP - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5220 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DC-15 GHz HBT Series-Shunt Amplifier |
| HMMC-5617 | 制造商:Agilent Technologies 功能描述:DC-18 GHZ GAAS MMIC AMPLIFIER - Gel-pak, waffle pack, wafer, diced wafer on film |
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