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3
HMMC-5033 Applications
The HMMC-5033 MMIC is a
broadband power amplifier
designed for use in transmitters
that operate in various frequency
bands between 17.7 GHz and
32 GHz. It can be attached to the
output of the HMMC-5040
(20–40 GHz) or the HMMC-5618
(5.9–20 GHz) MMIC amplifier,
increasing the power handling
capability of transmitters requir-
ing linear operation.
Biasing and Operation
The recommended DC bias
condition for optimum efficiency,
performance, and reliability is
V
D1
= 3.5 volts
and
V
D2
= 5 volts
with
V
GG
set for
I
D1
+ I
D2
= 700 mA
(no connection to
V
G1
). This bias
arrangement results in default
drain currents
I
D1
= 240 mA and
I
D2
= 460 mA.
A single DC gate supply con-
nected to
V
GG
will bias all gain
stages.
If operation with both
V
D1
and
V
D2
at 5 volts is desired, an
additional wire bond connection
from the
V
G1
pad to the
V
GG
external bypass chip-capacitor
(shorting
V
G1
to
V
GG
) will balance
the currents in each gain stage.
V
GG
(=
V
G1
) can be adjusted for
I
D1
+ I
D2
= 700 mA.
Muting can be accomplished by
setting
V
G1
and/or
V
GG
to the
pinch-off voltage V
P
.
An optional output power detec-
tor network is also provided.
Detector sensitivity can be
adjusted by biasing the diodes
with typically 1 to 5 volts applied
to the
Det-Bias
terminal. Simply
connecting
Det-Bias
to the
V
D2
supply is a convenient method of
biasing this detector network.
The differential voltage between
the
Det-Ref
and
Det-Out
bonding
pads can be correlated with the
RF power emerging from the
RF
Output
port.
The RF ports are AC-coupled at
the RF input to the first stage and
the RF output of the second
stage. If the output detector is
biased using the on-chip optional
Det-Bias
network, an external
Figure 1. HMMC-5033 Simplified Schematic Diagram.
AC-blocking capacitor may be
required at the
RF Output
port.
No ground wires are needed since
ground connections are made
with plated through-holes to the
backside of the device.
Assembly Techniques
Electrical and thermal conductive
epoxy die attach is the preferred
assembly method. Solder die
attach using a fluxless gold-tin
(AuSn) solder preform can also
be used. The device should be
attached to an electrically con-
ductive surface to complete the
DC and RF ground paths. The
backside metallization on the
device is gold.
It is recommended that the
electrical connections to the
bonding pads be made using
0.7–1.0 mil diameter gold wire.
The microwave/millimeter-wave
connections should be kept as
short as possible to minimize
inductance. For assemblies
requiring long bond wires,
multiple wires can be attached to
the RF bonding pads.
Thermosonic wedge is the
preferred method for wire
bonding to the gold bond pads. A
guided-wedge at an ultrasonic
power level of 64 dB can be used
for the 0.7 mil wire. The recom-
mended wire bond stage tempera-
ture is 150
±
2
°
C.
For more detailed information
see Agilent application note #999,
“GaAs MMIC Assembly and
Handling Guidelines.”
GaAs MMICs are ESD sensitive.
Proper precautions should be used
when handling these devices.
V
D2
Det. Out
V
D1
V
G2 =
V
GG
Det. Bias
(Optional)
Det. Reference
V
G1
(Optional)
R1 = 250
R2 = 1 K
R3 = 10 K
Stage 1
Stage 2
Ref. D2
R3
R3
R3
C
RF Input
RF Output
D1
R2
R1