- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄65471 > HMMC-5032 (AGILENT TECHNOLOGIES INC) 17700 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER PDF資料下載
參數(shù)資料
| 型號(hào)： | HMMC-5032 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 放大器 |
| 英文描述： | 17700 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 0.0533 X 0.030 INCH, 0.0056 INCH HEIGHT, DIE |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 626K |
| 代理商： | HMMC-5032 |
2
DC specifications/physical properties1
Symbol
Parameters/conditions
Minimum
Typical
Maximum
Units
V
D1,2
Drain supply operating voltages
2
4.5
5
Volts
I
D1
First stage drain supply current
100
140
mA
(V
DD = 4.5 V, VG1 =
~ –0.8 V)
I
D2
Second stage drain supply current
150
320
mA
(V
DD = 4.5 V, VGG =
~ –0.8 V)
V
G1,2
Gate supply operating voltages (I
DD =
~ 250 mA)
–0.8
Volts
V
P
Pinch-off voltage (V
DD = 4.5 V, IDD 10 mA)
–2
–1.2
Volts
Det. bias
Detector bias voltage (optional)
V
D1,2
5
Volts
θ
ch–bs
Thermal resistance2
67
°C/Watt
(channel-to-backside at T
ch = 160°C)
T
ch
Channel temperature3
160
°C
(TA = 85°C, MTTF > 106 hrs V
DD = 4.5 V, IDD = 250 mA)
1
Backside ambient operating temperature TA = 25°C unless otherwise noted.
2
Thermal resistance (°C/Watt) at a channel temperature T (°C) can be estimated using the equation: θ(T) =
~ θ
ch–bs x [T(°C)+273] / [160°C+273].
3
Derate MTTF by a factor of two for every 8°C above T
ch.
RF specifications
(T
A = 25°C, Z0 = 50 , VDD = 4.5 V, IDD = 250 mA)
Low band specifications
Upper band specifications
Symbol
Parameters/conditions
Minimum
Typical
Maximum
Minimum
Typical
Maximum
Units
BW
Operating bandwidth
17.7
26.5
25
31.5
GHz
Gain
Small signal gain
7
8
6
7
dB
Gain/T
Temperature coefficient of gain
0.02
dB/°C
P
–1 dB
Output power at 1 dB gain
21
22
21
22
dBm
compression
P
SAT
Saturated output power1
24
dBm
(RL
in)MIN
Minimum input return loss
8
9
10
15
dB
(RL
out)MIN
Minimum output return loss
9
10
15
20
dB
Isolation
Minimum reverse isolation
35
30
dB
1
Devices operating continuously beyond 1 dB gain compression may experience power degradation.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HMMC-5033 | 17700 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMMC-5034 | 37000 MHz - 42500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMMC-5038 | 37000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5038 | 37000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5200 | 0 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMMC-5033 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 32GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5034 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:37-43 GHz Amplifier |
| HMMC-5038 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:38 GHz LNA |
| HMMC-5040 | 制造商:Agilent Technologies 功能描述:RF AMP CHIP SGL GP 40GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5200 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GAIN AMP CHIP - Gel-pak, waffle pack, wafer, diced wafer on film |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。