- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370641 > HMD4M36M9EG-6 (Hanbit Electronics Co.,Ltd.) 16Mbyte(4Mx36) 72-pin SIMM, EDO with Parity Mode, 2K/4K Ref. 5V PDF資料下載
參數(shù)資料
| 型號： | HMD4M36M9EG-6 |
| 廠商： | Hanbit Electronics Co.,Ltd. |
| 英文描述： | 16Mbyte(4Mx36) 72-pin SIMM, EDO with Parity Mode, 2K/4K Ref. 5V |
| 中文描述： | 16Mbyte（4Mx36）72引腳平價模式，2K/4K參考上海藥物研究所，江戶。 5V的 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 67K |
| 代理商： | HMD4M36M9EG-6 |
HANBit HMD4M36M9EG, HMD4M36M9EA
URL:
www.hbe.co.kr
HANBit Electronics Co.,Ltd.
REV. 1.0. (August. 2002)
- 4 -
I
CC6
: /CAS-Before-/RAS Refresh Current * (/RAS and /CAS cycling @t
RC
=min )
I
IL
: Input Leakage Current (Any input 0V
≤
V
IN
≤
6.5V, all other pins not under test = 0V)
I
OL
: Output Leakage Current (Data out is disabled, 0V
≤
V
OUT
≤
5.5V
V
OH
: Output High Voltage Level (I
OH
= -5mA )
V
OL
: Output Low Voltage Level (I
OL
= 4.2mA )
*
NOTE
: I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the
output open. I
CC
is specified as an average current. In I
CC1
and I
CC3
, address cad be changed maximum once
while /RAS=V
IL
. In I
CC4
, address can be changed maximum once within one page mode cycle.
CAPACITANCE
( T
A
=25
o
C, Vcc = 5V, f = 1Mz )
DESCRIPTION
SYMBOL
MIN
MAX
UNITS
Input Capacitance (A0-A10)
C
IN1
-
65
pF
Input Capacitance (/W)
C
IN2
-
80
pF
Input Capacitance (/RAS0)
C
IN3
-
50
pF
Input Capacitance (/CAS0-/CAS3)
C
IN4
-
40
pF
Input/Output Capacitance (DQ0-31)
C
DQ1
-
20
pF
AC CHARACTERISTICS
( 0
o
C
≤
T
A
≤
70oC , Vcc = 5V
±
10%, See notes 1,2.)
-5
-6
STANDARD OPERATION
SYMBOL
MIN
MAX
MIN
MAX
UNIT
Random read or write cycle time
t
RC
90
110
ns
Access time from RAS
t
RAC
50
60
ns
Access time from CAS
t
CAC
13
15
ns
Access time from column address
t
AA
25
30
ns
CAS to output in Low-Z
t
CLZ
3
3
ns
Output buffer turn-off delay
t
OFF
3
13
3
15
ns
Transition time (rise and fall)
t
T
2
50
2
50
ns
/RAS precharge time
t
RP
30
40
ns
/RAS pulse width
t
RAS
50
10K
60
10K
ns
/RAS hold time
t
RSH
13
15
ns
/CAS hold time
t
CSH
38
45
ns
/CAS pulse width
t
CAS
8
10K
10
10K
ns
/RAS to /CAS delay time
t
RCD
20
37
20
45
ns
/RAS to column address delay time
t
RAD
15
25
15
30
ns
/CAS to /RAS precharge time
t
CRP
5
5
ns
Row address set-up time
t
ASR
0
0
ns
Row address hold time
t
RAH
10
10
ns
Column address set-up time
t
ASC
0
0
ns
相關PDF資料 |
PDF描述 |
|---|---|
| HMD4M64D16E | 32Mbyte(4Mx64) EDO Mode 4K Ref. 5V, DIMM 168 pin |
| HMDL-2416 | Four Character 3.8 mm (0.15 in.) Glass/Ceramic Smart Alphanumeric Display(四字符3.8 mm玻璃/陶瓷智能文字數(shù)字顯示器) |
| HMF-06020 | Power Optimized GaAs FET 2-14 GHz |
| HMF06020 | Power Optimized GaAs FET 2-14 GHz |
| HMF8M16F8V | FLASH-ROM MODULE 16MByte (8M x 16-Bit) Memory Stack Type |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HMD4M36M9G | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:16Mbyte(4Mx36) Fast Page with Parity Mode, 2K/4K Refresh |
| HMD4M36M9G-5 | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:16Mbyte(4Mx36) Fast Page with Parity Mode, 2K/4K Refresh |
| HMD4M36M9G-6 | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:16Mbyte(4Mx36) Fast Page with Parity Mode, 2K/4K Refresh |
| HMD4M64D16E | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:32Mbyte(4Mx64) EDO Mode 4K Ref. 5V, DIMM 168 pin |
| HMD4M64D16EV | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:32Mbyte(4Mx64) EDO Mode 4K Ref. 3.3V, DIMM 168 pin |
發(fā)布緊急采購，3分鐘左右您將得到回復。