參數(shù)資料
型號: HMD32M32M16G-6
廠商: Hanbit Electronics Co.,Ltd.
英文描述: 128Mbyte (32Mx32) 72-pin Fast Page Mode 4K Ref. SIMM Design 5V
中文描述: 128Mbyte(32Mx32)72針快速頁面模式4K的參考。上海藥物研究所設(shè)計5V的
文件頁數(shù): 5/7頁
文件大?。?/td> 103K
代理商: HMD32M32M16G-6
HANBit HMD32M32M16G
URL:www.hbe.co.kr
-
5
- HANBit Electronics Co.,Ltd.
REV.1.0 (August.2002)
Row address hold time
t
RAH
10
10
ns
Column address set-up time
t
ASC
0
0
ns
Column Address to /RAS lead time
t
RAL
25
30
ns
Read command set-up time
t
RCS
0
0
ns
Read command hold referenced to /CAS
t
RCH
0
0
ns
Read command hold referenced to /RAS
t
RRH
0
0
ns
Write command hold time
t
WCH
10
10
ns
Write command hold referenced to /RAS
t
WCR
50
55
ns
Write command pulse width
t
WP
10
10
ns
Write command to /RAS lead time
t
RWL
13
15
ns
Write command to /CAS lead time
t
CWL
8
10
ns
Data-in set-up time
t
DS
0
0
ns
Data-in hold time
t
DH
8
10
ns
Refresh period
t
REF
64
64
ns
Write command set-up time
t
WCS
0
0
ns
/CAS setup time (C-B-R refresh)
t
CSR
5
5
ns
/CAS hold time (C-B-R refresh)
t
CHR
10
10
ns
/RAS precharge to /CAS hold time
t
RPC
5
5
ns
NOTES
1.
An initial pause of 200
μ
s is required after power-up followed by any 8 /RAS-only or /CAS-before-/RAS refresh cycles
before proper device operation is achieved.
2.
V
IH (min)
and V
IL (max)
are reference levels for measuring timing of input signals. Transition times are measured between
V
IH(min)
and V
IL(max)
and are assumed to be 5ns for all inputs.
3.
Measured with a load equivalent to 2TTL loads and 100pF
4.
Operation within the t
RCD(max)
limit insures that t
RAC(max)
can be met. t
RCD(max)
is specified as a reference point only. If t
RCD
is greater than the specified t
RCD(max)
limit, then access time is controlled exclusively by t
CAC
.
5.
Assumes that t
RCD
t
RCD(max)
6. t
AR
, t
WCR
, t
DHR
are referenced to t
RAD(max)
7.This parameter defines the time at which the output achieves the open circuit condition and is not referenced to V
OH
or V
OL
.
8. t
WCS
, t
RWD
, t
CWD
anf t
AWD
are non restrictive operating parameter.
They are included in the data sheet as electrical characteristic only. If t
WCS
tWCS(min)
the cycle is an early write
cycle and the data out pin will remain high impedance for the duration of the cycle.
9. Either t
RCH
or t
RRH
must be satisfied for a read cycle.
10. These parameters are referenced to the /CAS leading edge in early write cycles and to the /W leading edge in read-
write cycles.
11. Operation within the t
RAD(max)
limit insures that t
RAC(max)
can be met. t
RAD(max)
is specified as a reference
point only. If t
RAD
is greater than the specified t
RAD(max)
limit. then access time is controlled by t
AA
.
AC CHARACTERISTICS
( 0
o
C
T
A
70oC , Vcc = 5V
±
10%)
相關(guān)PDF資料
PDF描述
HMD4M144D9WG-5 64Mbyte(4Mx144) 200-pin ECC Mode 4K Ref. DIMM Design 5V
HMD4M144D9WG 64Mbyte(4Mx144) 200-pin ECC Mode 4K Ref. DIMM Design 5V
HMD4M144D9WG-6 64Mbyte(4Mx144) 200-pin ECC Mode 4K Ref. DIMM Design 5V
HMD4M1Z1 4Mbit(4Mx1bit) Fast Page Mode, 1K Refresh, 20Pin ZIP, 5V Design
HMD4M1Z1-5 4Mbit(4Mx1bit) Fast Page Mode, 1K Refresh, 20Pin ZIP, 5V Design
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HMD32M64D8A-10 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:Synchronous DRAM Module 64Mbyte (8Mx72bit),DIMM based on 32Mx8, 4Banks, 8K Ref., 3.3V
HMD32M64D8A-10L 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:Synchronous DRAM Module 64Mbyte (8Mx72bit),DIMM based on 32Mx8, 4Banks, 8K Ref., 3.3V
HMD32M64D8A-12 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:Synchronous DRAM Module 64Mbyte (8Mx72bit),DIMM based on 32Mx8, 4Banks, 8K Ref., 3.3V
HMD32M64D8A-13 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:Synchronous DRAM Module 64Mbyte (8Mx72bit),DIMM based on 32Mx8, 4Banks, 8K Ref., 3.3V
HMD32M64D8A-F10 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:Synchronous DRAM Module 64Mbyte (8Mx72bit),DIMM based on 32Mx8, 4Banks, 8K Ref., 3.3V