參數(shù)資料
型號(hào): HMD2M32M4EAG-7
廠商: Hanbit Electronics Co.,Ltd.
英文描述: 8Mbyte(2Mx32) EDO Mode, 1K Refresh 72Pin SIMM, 5V Design
中文描述: 8Mbyte(2Mx32)EDO公司模式,每1000刷新72Pin上海藥物研究所,5V的設(shè)計(jì)
文件頁數(shù): 3/7頁
文件大?。?/td> 74K
代理商: HMD2M32M4EAG-7
HANBit HMD2M32M4EAG
URL:www.hbe.co.kr HANBit Electronics Co.,Ltd.
REV. 1.0 (August.2002)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
Voltage on Any Pin Relative to Vss
V
IN ,OUT
-1V to 7.0V
Voltage on Vcc Supply Relative to Vss
Vcc
-1V to 7.0V
Power Dissipation
P
D
4W
Storage Temperature
T
STG
-55oC to 150oC
Short Circuit Output Current
w
Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be
restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
I
OS
50mA
RECOMMENDED DC OPERATING CONDITIONS
(Voltage reference to V
SS
, TA=0 to 70 o C )
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Supply Voltage
Vcc
4.5
5.0
5.5
V
Ground
Vss
0
0
0
V
Input High Voltage
V
IH
2.4
-
Vcc+1
V
Input Low Voltage
V
IL
-1.0
-
0.8
V
DC AND OPERATING CHARACTERISTICS
SYMBOL
SPEED
MIN
MAX
UNITS
I
CC1
-5
-6
-
-
305
284
mA
mA
I
CC2
-
8
mA
I
CC3
-5
-6
-
-
304
284
mA
mA
I
CC4
-5
-6
-
-
244
224
mA
mA
I
CC5
-
4
mA
I
CC6
-5
-6
-
-
304
284
mA
mA
I
l(L)
I
O(L)
-20
-10
20
10
μ
A
μ
A
V
OH
V
OL
2.4
-
-
0.4
V
V
I
CC1
: Operating Current * (/RAS , /CAS , Address cycling @t
RC
=min.)
I
CC2
: Standby Current ( /RAS=/CAS=V
)
I
CC3
: /RAS Only Refresh Current * ( /CAS=V
IH
, /RAS, Address cycling @t
RC
=min )
I
CC4
: Fast Page Mode Current * (/RAS=V
, /CAS, Address cycling @t
PC
=min )
I
CC5
: Standby Current (/RAS=/CAS=Vcc-0.2V )
I
CC6
: /CAS-Before-/RAS Refresh Current * (/RAS and /CAS cycling @t
RC
=min )
I
IL
: Input Leakage Current (Any input 0V
V
IN
6.5V, all other pins not under test = 0V)
I
OL
: Output Leakage Current (Data out is disabled, 0V
V
OUT
5.5V
V
OH
: Output High Voltage Level (I
OH
= -5mA )
V
OL
: Output Low Voltage Level (I
OL
= 4.2mA )
相關(guān)PDF資料
PDF描述
HMD2M32M4E 8Mbyte(2Mx32) EDO Mode, 1K Refresh 72Pin SIMM, 5V Design
HMD2M32M4EG 8Mbyte(2Mx32) EDO Mode, 1K Refresh 72Pin SIMM, 5V Design
HMD2M32M4EG-5 8Mbyte(2Mx32) EDO Mode, 1K Refresh 72Pin SIMM, 5V Design
HMD2M32M4EG-6 8Mbyte(2Mx32) EDO Mode, 1K Refresh 72Pin SIMM, 5V Design
HMD2M32M4EG-7 8Mbyte(2Mx32) EDO Mode, 1K Refresh 72Pin SIMM, 5V Design
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HMD2M32M4EG 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:8Mbyte(2Mx32) EDO Mode, 1K Refresh 72Pin SIMM, 5V Design
HMD2M32M4EG-5 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:8Mbyte(2Mx32) EDO Mode, 1K Refresh 72Pin SIMM, 5V Design
HMD2M32M4EG-6 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:8Mbyte(2Mx32) EDO Mode, 1K Refresh 72Pin SIMM, 5V Design
HMD2M32M4EG-7 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:8Mbyte(2Mx32) EDO Mode, 1K Refresh 72Pin SIMM, 5V Design
HMD2M64B2-10 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:Synchronous DRAM Module 16Mbyte (2Mx64-Bit), SO-DIMM, 4Banks, 4K Ref., 3.3V