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參數資料
| 型號： | HMD1M32M2GL-6 |
| 廠商： | Hanbit Electronics Co.,Ltd. |
| 英文描述： | 4Mbyte(1Mx32) Fast Page Mode, 1K Refresh, 72Pin SIMM, 5V Design |
| 中文描述： | 4Mbyte（1Mx32）快速頁面模式，每1000刷新，72Pin上海藥物研究所，5V的設計 |
| 文件頁數： | 6/7頁 |
| 文件大?。?/td> | 201K |
| 代理商： | HMD1M32M2GL-6 |
HANBit HMD1M32M2GL
URL:www.hbe.co.kr
HANBit Electronics Co., Ltd.
REV.1.0 (August.2002)
the entire cycle. If
t
>=
t
(min),
t
>=
t
(min), T
>= T
(min), then the cycle is a read-modify-write
cycle and the data output will contain the data read from the selected address. If neither of the above conditions is
satisfied, the condition of the data out is indeterminate.
8. Either
t
RCH or
t
RRH must be satisfied for a read cycles.
9. These parameters are referenced to /CAS falling edge in early write cycles and to /WE falling edge in /OE controlled
write cycle and read-modify-write cycles.
10. Operation with the
t
RAD
(max) limit insures that
t
RAC
(max) can be met,
t
RAD
(max) is specified as a reference point only,
if
t
RAD
is greater than the specified
t
RAD
(max) limit, then access time is controlled exclusively by
t
AA
.
11.
t
ASC,
t
are are referenced to the earlier /CAS falling edge.
12.
t
CP
is specified from the later /CAS rising edge in the previous cycle to the earlier /CAS falling edge in the next cycle.
13.
t
CWD
is referenced to the later /CAS falling edge at word read-modify-write cycle.
14.
t
CWL
is specified from /WE falling edge to the earlier /CAS rising edge .
15.
t
CSR
is referenced to the earlier /CAS falling edge before /RAS transition low.
16.
t
CHR
is referenced to the later /CAS rising edge after /RAS transition low.
PACKAGING INFORMATION
0.25 mm MAX
MIN
2.54 mm
1.27 mm
1.27
±
0.08 mm
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