參數(shù)資料
型號(hào): HMD1M32M2G
廠商: Hanbit Electronics Co.,Ltd.
英文描述: 4Mbyte(1Mx32) Fast Page Mode, 1K Refresh, 72Pin SIMM, 5V Design
中文描述: 4Mbyte(1Mx32)快速頁(yè)面模式,每1000刷新,72Pin上海藥物研究所,5V的設(shè)計(jì)
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 200K
代理商: HMD1M32M2G
HANBit HMD1M32M2G
URL:www.hbe.co.kr
HANBiT Electronics Co., Ltd
REV.1.0 (August.2002)
ICC7
Standby Current /RAS = VIH
/CAS = VIL
DOUT = Enable
-
10
mA
1
II(L)
Input Leakage Current
Any Input (0V<=VIN<=7V)
All Other Pins Not Under Test = 0V
-10
10
uA
IO(L)
Output Leakage Current
(DOUT is Disabled, 0V<=VOUT<=7V)
-10
10
uA
Note
: 1.Icc depends on output load condition when the device is selected.
Icc (max) is specified at the output open condition.
2. Address can be changed once or less while /RAS = VIL.
3. Address can be changed once or less while /CAS = VIH
CAPACITANCE
( T
A
=25
o
C, Vcc = 5V+/- 10%, f = 1Mhz )
DESCRIPTION
SYMBOL
MIN
MAX
UNITS NOTE
Input Capacitance (A0-A9)
C
I1
-
35
pF 1
Input Capacitance (/WE)
C
I2
-
34
pF 1,2
Input Capacitance (/RAS0,/RAS2)
C
I3
-
27
pF 1,2
Input Capacitance (/CAS0-/CAS3)
C
I4
-
27
pF 1,2
Input/Output Capacitance (DQ0-31)
C
DQ1
-
20
pF 1,2
Note:
1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. /CAS = VIH to disable DOUT.
AC CHARACTERISTICS
( 0
o
C
T
A
70oC , Vcc = 5V
±
10%, See notes 1,15.)
The GMM731000CNS/SG writes data only in early write cycle (twcs>=twcs(min))
Delayed write cycle is not available because of I/O common.
READ, WRITE AND REFRESH CYCLE
(Common Parameters)
-6
-7
SYMBOL
PARAMETER
MIN
MAX
MIN
MAX
UNIT
NOTE
tRC
Random Read or Write Cycle Time
110
-
130
-
ns
tPR
/RAS Precharge Time
40
-
50
-
ns
tRAS
/RAS Pulse Width
60
10K
70
10K
ns
tCAS
/CAS Pulse Width
15
10K
18
10K
ns
tASR
Row Address Setup Time
0
-
0
-
ns
tRAH
Row Address Hold Time
10
-
10
-
ns
tASC
Column Address Setup Time
0
-
0
-
ns
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