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參數(shù)資料
| 型號(hào)： | HMD1M32M2EG-45 |
| 廠商： | Hanbit Electronics Co.,Ltd. |
| 英文描述： | 4Mbyte(1Mx32) EDO Mode, 1K Refresh, 72Pin SIMM, 5V Design |
| 中文描述： | 4Mbyte（1Mx32）EDO公司模式，每1000刷新，72Pin上海藥物研究所，5V的設(shè)計(jì) |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 77K |
| 代理商： | HMD1M32M2EG-45 |
HANBit HMD1M32M2EG
URL:www.hbe.co.kr
- 4 -
HANBiT Electronics Co., Ltd
.
REV. 1.0 (August. 2002)
(/RAS = VIL, /CAS, Address Cycling : tPC = tPC min) 70ns
-
300
mA
1,3
ICC5
Standby Current (CMOS)
Power Supply Standby Current
(/RAS,/CAS >= Vcc
–
0.2V)
-
2
mA
ICC6
/CAS before /RAS Refresh Current 60ns
(
t
RC =
t
RC min) 70ns
-
-
340
300
mA
ICC7
Standby Current /RAS = VIH
/CAS = VIL
DOUT = Enable
-
10
mA
1
II(L)
Input Leakage Current
Any Input (0V<=VIN<=7V)
All Other Pins Not Under Test = 0V
-10
10
uA
IO(L)
Output Leakage Current
(DOUT is Disabled, 0V<=VOUT<=7V)
-10
10
uA
Note:
1.Icc depends on output load condition when the device is selected.
Icc (max) is specified at the output open condition.
2. Address can be changed once or less while /RAS = VIL.
3. Address can be changed once or less while /CAS = VIH
CAPACITANCE
( T
A
=25
o
C, Vcc = 5V+/- 10%, f = 1Mhz )
DESCRIPTION
SYMBOL
MIN
MAX
UNITS NOTE
Input Capacitance (A0-A9)
C
I1
-
35
pF 1
Input Capacitance (/WE)
C
I2
-
34
pF 1,2
Input Capacitance (/RAS0,/RAS2)
C
I3
-
27
pF 1,2
Input Capacitance (/CAS0-/CAS3)
C
I4
-
27
pF 1,2
Input/Output Capacitance (DQ0-31)
C
DQ1
-
20
pF 1,2
Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. /CAS = VIH to disable DOUT.
AC CHARACTERISTICS
( 0
o
C
≤
T
A
≤
70oC , Vcc = 5V
±
10%, See notes 1,15.)
The GMM731000CNS/SG writes data only in early write cycle (twcs>=twcs(min))
Delayed write cycle is not available because of I/O common.
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| HMD1M32M2EG-60 | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:4Mbyte(1Mx32) EDO Mode, 1K Refresh, 72Pin SIMM, 5V Design |
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| HMD1M32M2G | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:4Mbyte(1Mx32) Fast Page Mode, 1K Refresh, 72Pin SIMM, 5V Design |
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