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參數(shù)資料
| 型號： | HMD16M72D9A-12 |
| 廠商： | Hanbit Electronics Co.,Ltd. |
| 英文描述： | Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V |
| 中文描述： | 同步DRAM模塊128Mbyte（8Mx72bit），帶ECC內存的基礎上16Mx8，4Banks，4K的參考。，3.3 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大小： | 95K |
| 代理商： | HMD16M72D9A-12 |
HANBit HSD16M72D9A
URL:www.hbe.co.kr
- 6 -
HANBit Electronics Co.,Ltd.
REV.1.0 (August.2002)
Operating current
(Burst mode)
I
CC4
I
= 0 mA
Page burst
4Banks Activated
t
CCD
= 2CLKs
t
RC
≥
t
RC
(min)
150
145
125
125
mA
1
Refresh current
I
CC5
220
220
210
1.5
800
210
mA
mA
mA
2
Self refresh current
I
CC6
CKE
≤
0.2V
Notes:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ
).
AC OPERATING TEST CONDITIONS
(vcc = 3.3V
±
0.3V, TA = 0 to 70
°
C)
PARAMETER
Value
UNIT
AC Input levels (Vih/Vil)
2.4/0.4
V
Input timing measurement reference level
1.4
V
Input rise and fall time
tr/tf = 1/1
ns
Output timing measurement reference level
1.4
V
Output load condition
See Fig. 2
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
VERSION
PARAMETER
SYMBOL
-13
-12
-10
-10L
UNIT
NOTE
Row active to row active delay
t
RRD
(min)
15
16
20
20
ns
1
RAS to CAS delay
t
RP
(min)
20
20
20
20
ns
1
Row precharge time
t
RP
(min)
t
RAS
(min)
t
RAS
(max)
20
45
20
48
20
50
20
50
ns
ns
1
1
Row active time
100
ns
Row cycle time
tRC
(min)
65
68
70
70
ns
1
Last data in to row precharge
t
RDL
(min)
2
CLK
2
Last data in to Active delay
t
DAL
(min)
2 CLK + 20 ns
-
+3.3V
1200
870
50pF*
D
OUT
V
tt
=1.4V
50
50pF
D
OUT
Z0=50
V
OH
(DC) = 2.4V, I
OH
= -2mA
V
OL
(DC) = 0.4V, I
OL
= 2mA
(Fig. 1) DC output load
circuit
(Fig. 2) AC output load circuit
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|---|---|
| HMD16M72D9A-13 | Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V |
| HMD16M72D9A-F10 | Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V |
| HMD16M72D9A-F10L | Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V |
| HMD16M72D9A-F12 | Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V |
| HMD16M72D9A-F13 | Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HMD16M72D9A-13 | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V |
| HMD16M72D9A-F10 | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V |
| HMD16M72D9A-F10L | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V |
| HMD16M72D9A-F12 | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V |
| HMD16M72D9A-F13 | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V |
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