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參數(shù)資料
| 型號(hào)： | HMC998 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 100 MHz - 22000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 2.99 X 1.84 MM, 0.10 MM HEIGHT, ROHS COMPLIANT, DIE-8 |
| 文件頁(yè)數(shù)： | 8/10頁(yè) |
| 文件大?。?/td> | 565K |
| 代理商： | HMC998 |
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC998
v00.0611
GaAs PHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 22 GHz
Pad Number
function
Description
interface schematic
1
rfin
This pad is DC coupled and matched
to 50 ohms. Blocking capacitor is required.
2
VGG2
Gate control 2 for amplifier. Attach bypass
capacitor per application circuit herein. for nominal
operation +9.5V should be applied to Vgg2.
4, 7
ACG2, ACG4
Low frequency termination. Attach bypass
capacitor per application circuit herein.
3
ACG1
Low frequency termination. Attach bypass
capacitor per application circuit herein.
5
rfoUT & VDD
RF output for amplifier. Connect DC bias (Vdd) network to
provide drain current (idd). see application circuit herein.
6
ACG3
Low frequency termination. Attach bypass
capacitor per application circuit herein.
8
VGG1
Gate control 1 for amplifier. Attach bypass
capacitor per application circuit herein. please
follow “mmiC Amplifier Biasing procedure”
application note.
Die Bottom
GnD
Die bottom must be connected to RF/DC ground.
Pad Descriptions
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