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參數(shù)資料
| 型號： | HMC930 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 0 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 2.82 X 1.50 MM, 0.10 MM HEIGHT, DIE-8 |
| 文件頁數(shù)： | 7/10頁 |
| 文件大小： | 703K |
| 代理商： | HMC930 |
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC930
v00.0610
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Second Harmonics vs. Temperature @ Pout =
14 dBm, Vdd = 10V & Vgg = 3.5V, 175mA
Second Harmonics vs.
Vdd @ Pout = 14 dBm, Idd = 175mA [1]
Second Harmonics vs. Pout
Vdd = 10V & Vgg = 3.5V & Idd = 175mA
0
10
20
30
40
50
60
70
0
4
8
12
16
20
24
+25C
+85C
-40C
S
E
C
O
N
D
H
A
R
M
O
N
IC
(d
B
c)
FREQUENCY(GHz)
0
10
20
30
40
50
60
70
0
4
8
12
16
20
24
+8V
+10V
+11V
S
E
C
O
N
D
H
A
R
M
O
N
IC
(d
B
c)
FREQUENCY(GHz)
0
10
20
30
40
50
60
70
0
4
8
12
16
20
24
+4 dBm
+6 dBm
+8 dBm
+10 dBm
+12 dBm
+14 dBm
S
E
C
O
N
D
H
A
R
M
O
N
IC
(d
B
c)
FREQUENCY(GHz)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
12V
Gate Bias Voltage (Vgg1)
-3 to 0 Vdc
Gate Bias Voltage (Vgg2)
for Vdd = 12V, Vgg2 = 5.5V
idd >145mA
for Vdd between 8.5V to 11V,
Vgg2 = (Vdd - 6.5V) up to 4.5V
for Vdd < 8.5V,
Vgg2 must remain > 2V
rf input power (rfin)
17 dBm
Channel Temperature
150 °C
Continuous pdiss (T= 85 °C)
(derate 69 mw/°C above 85 °C)
2.1 w
Thermal resistance
(channel to die bottom)
31.1 °C/w
eleCTrosTATiC sensiTiVe DeViCe
oBserVe hAnDlinG preCAUTions
Vdd (V)
idd (mA)
+9
175
+10
175
+11
175
Typical Supply Current vs. Vdd
output power into Vswr >7:1
24 dBm
storage Temperature
-65 to 150 °C
operating Temperature
-55 to 85 °C
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