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參數(shù)資料
| 型號： | HMC907LP5E |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 200 MHz - 22000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 5 X 5 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, QFN-32 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 583K |
| 代理商： | HMC907LP5E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC907LP5E
v00.0510
GaAs pHEMT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
Power Dissipation
0
1
2
3
4
5
6
0
4
8
12
16
20
2 GHz
10 GHz
20 GHz
Max Pdiss @ 85C
P
O
W
E
R
D
IS
S
IP
A
T
IO
N
(W
)
INPUT POWER (dBm)
Power Compression @ 10 GHz
Gain & Power Supply
vs. Supply Current @ 10 GHz
0
4
8
12
16
20
24
28
32
0
3
6
9
12
15
18
21
Pout
Gain
PAE
P
ou
t(
dB
m
),
G
A
IN
(d
B
),
P
A
E
(%
)
INPUT POWER (dBm)
10
15
20
25
30
35
8
9
10
11
Gain (dB)
P1dB (dBm)
Psat (dBm)
Vdd (V)
Gain
(dB),
P1dB
(dBm),
Psat
(dBm)
Second Harmonics vs. Pout @ Vdd = 10V
Second Harmonics vs. Vdd @ Pout = 16 dBm
Second Harmonics vs.
Temperature @ Pout = 16 dBm, Vdd = 10V
0
10
20
30
40
50
60
70
0
4
8
12
16
20
24
+25C
+85C
-40C
S
E
C
O
N
D
H
A
R
M
O
N
IC
(d
B
c)
FREQUENCY(GHz)
0
10
20
30
40
50
60
70
0
4
8
12
16
20
24
+8V
+9V
+10V
+11V
S
E
C
O
N
D
H
A
R
M
O
N
IC
(d
B
c)
FREQUENCY(GHz)
0
10
20
30
40
50
60
70
0
4
8
12
16
20
24
+8 dBm
+10 dBm
+12 dBm
+14 dBm
+16 dBm
+18 dBm
S
E
C
O
N
D
H
A
R
M
O
N
IC
(d
B
c)
FREQUENCY(GHz)
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