參數(shù)資料
型號(hào): HM62W16255HCI
廠商: Hitachi,Ltd.
英文描述: Wide Temperature Range Version 4M High Speed SRAM (256-kword ⅴ 16-bit)
中文描述: 寬溫版本4分高速SRAM(256 - KWord的ⅴ16位)
文件頁(yè)數(shù): 6/17頁(yè)
文件大?。?/td> 87K
代理商: HM62W16255HCI
HM62W16255HCI Series
Rev.1, Nov. 2001, page 6 of 17
Recommended DC Operating Conditions
(Ta = –40 to +85°C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
V
CC
*
V
SS
*
V
IH
V
IL
3
3.0
3.3
3.6
V
4
0
0
0
V
Input voltage
2.0
V
CC
+ 0.5*
0.8
2
V
–0.5*
1
V
Notes: 1. V
IL
(min) = –2.0 V for pulse width (under shoot)
6 ns
2. V
IH
(max) = V
CC
+ 2.0 V for pulse width (over shoot)
6 ns
3. The supply voltage with all V
CC
pins must be on the same level.
4. The supply voltage with all V
SS
pins must be on the same level.
DC Characteristics
(Ta = –40 to +85°C, V
CC
= 3.3 V ± 0.3 V, V
SS
= 0 V)
Parameter
Symbol Min
Typ*
1
Max
Unit
Test conditions
Input leakage current
|I
LI
|
|I
LO
|
I
CC
2
μA
Vin = V
SS
to V
CC
Vin = V
SS
to V
CC
Min cycle
CS
= V
, Iout = 0 mA
Other inputs = V
IH
/V
IL
Min cycle,
CS
= V
IH
,
Other inputs = V
IH
/V
IL
f = 0 MHz
V
CS
V
CC
– 0.2 V,
(1) 0 V
Vin
0.2 V or
(2) V
CC
Vin
V
CC
– 0.2 V
I
OL
= 8 mA
I
OH
= –4 mA
Output leakage current
2
μA
Operating power supply current
130
mA
Standby power supply current
I
SB
40
mA
I
SB1
2.5
5
mA
Output voltage
V
OL
V
OH
0.4
V
2.4
V
Notes: 1. Typical values are at V
CC
= 3.3 V, Ta = +25°C and not guaranteed.
相關(guān)PDF資料
PDF描述
HM62W16255HCLTT-10 4M High Speed SRAM (256-kword x 16-bit)
HM62W16255HCLJP-10 4M High Speed SRAM (256-kword x 16-bit)
HM62W16255HCJP-10 4M High Speed SRAM (256-kword x 16-bit)
HM62W16255HI 4M High Speed SRAM (256-kword x 16-bit)
HM62W16255HC 4M High Speed SRAM (256-kword x 16-bit)
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