參數(shù)資料
型號: HM62W16255H
廠商: Hitachi,Ltd.
英文描述: 4M High Speed SRAM (256-kword ×16-bit)(4M高速靜態(tài)RAM(256k字 ×16位))
中文描述: 4分高速SRAM(256 - KWord的× 16位)(4分高速靜態(tài)隨機存儲器(256k字× 16位))
文件頁數(shù): 1/19頁
文件大?。?/td> 152K
代理商: HM62W16255H
HM62W16255H Series
4M High Speed SRAM (256-kword
×
16-bit)
ADE-203-751D (Z)
Rev. 1.0
Sept. 15, 1998
Description
The HM62W16255H is a 4-Mbit high speed static RAM organized 256-kword
×
16-bit. It has realized
high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high
speed circuit designing technology. It is most appropriate for the application which requires high speed,
high density memory and wide bit width configuration, such as cache and buffer memory in system. The
HM62W16255H is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density
surface mounting.
Features
Single 3.3 V supply: 3.3 V
±
0.3V
Access time: 12/15 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current: 180/160 mA (max)
TTL standby current: 60/50 mA (max)
CMOS standby current: 5 mA (max)
: 1mA (max) (L-version)
Data retention current: 0.6 mA (max) (L-version)
Data retention voltage: 2.0 V (min) (L-version)
Center V
CC
and V
SS
type pinout
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