參數(shù)資料
型號： HM62W16255CTTI12
廠商： Hitachi,Ltd.
英文描述： Wide Temperature Range Version 4M High Speed SRAM (256-kword ⅴ 16-bit)
中文描述： 寬溫版本4分高速SRAM（256 - KWord的ⅴ16位）
文件頁數(shù)： 5/17頁
文件大?。?/td> 87K
代理商： HM62W16255CTTI12
HM62W16255HCI Series
Rev.1, Nov. 2001, page 5 of 17
Operation Table
C S
OE
W E
L B
U B
Mode
V
CC
current
I
SB
, I
SB1
I
CC
I
CC
I/O1–I/O8
I/O9–I/O16
Ref. cycle
H
×
×
×
×
×
×
Standby
High-Z
High-Z
—
L
H
H
Output disable
High-Z
High-Z
—
L
L
H
L
L
Read
Output
Output
Read cycle
L
L
H
L
H
Lower byte read I
CC
Upper byte read I
CC
—
Output
High-Z
Read cycle
L
L
H
H
L
High-Z
Output
Read cycle
L
L
H
H
H
I
CC
I
CC
High-Z
High-Z
—
L
×
×
×
×
L
L
L
Write
Input
Input
Write cycle
L
L
L
H
Lower byte write I
CC
Upper byte write I
CC
—
Input
High-Z
Write cycle
L
L
H
L
High-Z
Input
Write cycle
L
Note:
L
H
H
I
CC
High-Z
High-Z
—
H: V
IH
, L: V
IL
,
×
: V
IH
or V
IL
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage relative to V
SS
Voltage on any pin relative to V
SS
Power dissipation
V
CC
V
T
P
T
Topr
–0.5 to +4.6
V
–0.5*
1
to V
CC
+ 0.5*
2
V
1.0
W
Operating temperature
–40 to +85
°C
Storage temperature
Tstg
–55 to +125
°C
Storage temperature under bias
Notes: 1. V
T
(min) = –2.0 V for pulse width (under shoot)
≤
6 ns
2. V
T
(max) = V
CC
+ 2.0 V for pulse width (over shoot)
≤
6 ns
Tbias
–40 to +85
°C
相關(guān)PDF資料
PDF描述
HM62W16255HCI Wide Temperature Range Version 4M High Speed SRAM (256-kword ⅴ 16-bit)
HM62W16255HCLTT-10 4M High Speed SRAM (256-kword x 16-bit)
HM62W16255HCLJP-10 4M High Speed SRAM (256-kword x 16-bit)
HM62W16255HCJP-10 4M High Speed SRAM (256-kword x 16-bit)
HM62W16255HI 4M High Speed SRAM (256-kword x 16-bit)
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