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參數(shù)資料
| 型號(hào)： | HM62V16256CBPI |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 4 M SRAM (256-kword ×16-bit)(4M靜態(tài)RAM (256k字 ×16位)) |
| 中文描述： | 四米的SRAM（256 - KWord的× 16位）（4分靜態(tài)隨機(jī)存儲(chǔ)器（256k字× 16位）） |
| 文件頁(yè)數(shù)： | 1/18頁(yè) |
| 文件大?。?/td> | 129K |
| 代理商： | HM62V16256CBPI |
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Preliminary: The specification of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specification.
HM62V16256CBPI Series
Wide Temperature Range Version
4 M SRAM (256-kword
×
16-bit)
ADE-203-1101 (Z)
Preliminary
Rev. 0.0
Aug. 30, 1999
Description
The Hitachi HM62V16256CBPI Series is 4-Mbit static RAM organized 262,144-word
×
16-bit.
HM62V16256CBPI Series has realized higher density, higher performance and low power consumption by
employing Hi-CMOS process technology. It offers low power standby power dissipation; therefore, it is
suitable for battery backup systems. It is packaged in 48 bumps chip size package with 0.75 mm bump pitch
for high density surface mounting. HM62V16256CBPI is suitable for the application of the mobile phone to
reduce both the mount space and weight.
Features
Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V
Fast access time: 70 ns (max)
Power dissipation:
Active: TBD (typ)
Standby: 2.4
μ
W (typ)
Completely static memory.
No clock or timing strobe required
Equal access and cycle times
Common data input and output.
Three state output
Battery backup operation.
2 chip selection for battery backup
Temperature range: –40 to +85
°
C
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