- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370633 > HM62G18256 (Hitachi,Ltd.) 4M Synchronous Fast Static RAM (256k-words ×18-bits)(4M同步快速靜態(tài)RAM(256k字 ×18位)) PDF資料下載
參數(shù)資料
| 型號： | HM62G18256 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 4M Synchronous Fast Static RAM (256k-words ×18-bits)(4M同步快速靜態(tài)RAM(256k字 ×18位)) |
| 中文描述： | 4分同步快速靜態(tài)存儲器（256k -字× 18位）（4分同步快速靜態(tài)隨機存儲器（256k字× 18位）） |
| 文件頁數(shù)： | 14/24頁 |
| 文件大?。?/td> | 194K |
| 代理商： | HM62G18256 |
HM62G18256 Series
14
Boundary Scan Test Access Port Operations
overview
In order to perform the interconnect testing of the modules that include this SRAM, the serial boundary
scan test access port (TAP) is designed to operate in a manner consistent with IEEE Standard 1149.1 -
1990. But does not implement all of the functions required for 1149.1 compliance The HM62G series
contains a TAP controller. Instruction register, Boundary scan register, Bypass register and ID register.
Test Access Port Pins
Symbol I/O
Name
TCK
Test Clock
TMS
Test Mode Select
TDI
Test Data In
TDO
Notes: This Device does not have a TRST (TAP Reset) pin. TRST is optional in IEEE 1149.1.
To disable the TAP, TCK must be connected to Vss. TDO should be left unconnected.
To test Boundary scan, ZZ pin need to be kept below Vref –0.4V.
Test Data Out
TAP DC Operating Characteristics
(Ta = 0C to 70C [Tj max = 110
°
C])
Parameter
Symbol
Min
Max
Note
Boundary scan Input High voltage
V
IH
V
IL
I
LI
V
OL
V
OH
2.0 V
V
DD
+ 0.3 V
0.8 V
Boundary scan Input Low voltage
–0.5 V
Boundary scan Input Leakage Current
–2
μ
A
+2
μ
A
1
Boundary scan Output Low voltage
0.4 V
2
Boundary scan Output High voltage
Notes: 1. 0
≤
Vin
≤
V
DD
for all logic input pin
2. I
OL
= –8 mA
3. I
OH
= 8 mA
2.4 V
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HM62G18512BP-4 | Cartridge Fuse; Fuse Type:Fast Acting; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Series:AGC-V RoHS Compliant: No |
| HM62G18512BP-5 | 8M Synchronous Fast Static RAM(512k-word x 18-bit) |
| HM62G18512 | 8M Synchronous Fast Static RAM (512k-word ×18-bit)(8M 同步快速靜態(tài)RAM (512k字 ×18位)) |
| HM62G36128 | 4M Synchronous Fast Static RAM (128k-words ×36-bits)(4M同步快速靜態(tài)RAM(128k字 ×36位)) |
| HM62G36256BP-4 | 8M Synchronous Fast Static RAM(256k-word x 36-bit) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HM62V16256CLTT-5SI | 制造商:Hitachi 功能描述: |
| HM62V16258CLTT-5SL | 制造商:Renesas Electronics Corporation 功能描述: |
| HM62V16514LTTI-5SL | 制造商:Renesas Electronics Corporation 功能描述: |
| HM62V8100LTTI-5SL | 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Async Single 3V 8M-Bit 1M x 8 55ns 44-Pin TSOP-II 制造商:Renesas Electronics 功能描述:8M~8 55ns 3V TSOP 制造商:Renesas Electronics Corporation 功能描述:IC,Memory,SRAM,low power,TSOP4 |
| HM62W16255HCJP12 | 制造商:Renesas Electronics Corporation 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。