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參數(shù)資料
| 型號(hào)： | HM628512C |
| 廠(chǎng)商： | Hitachi,Ltd. |
| 英文描述： | Octal Buffers And Line Drivers With 3-State Outputs 20-CFP -55 to 125 |
| 中文描述： | 四米的SRAM（512 - KWord的× 8位） |
| 文件頁(yè)數(shù)： | 8/17頁(yè) |
| 文件大小： | 84K |
| 代理商： | HM628512C |
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HM628512C Series
8
Write Cycle
HM628512C
-5
-7
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Write cycle time
t
WC
t
CW
t
AS
t
AW
t
WP
t
WR
t
WHZ
t
DW
t
DH
t
OW
t
OHZ
55
—
70
—
ns
Chip selection to end of write
50
—
60
—
ns
4
Address setup time
0
—
0
—
ns
5
Address valid to end of write
50
—
60
—
ns
Write pulse width
40
—
50
—
ns
3, 12
Write recovery time
WE
to output in high-Z
0
—
0
—
ns
6
0
20
0
25
ns
1, 2, 7
Data to write time overlap
25
—
30
—
ns
Data hold from write time
0
—
0
—
ns
Output active from output in high-Z
5
—
5
—
ns
2
Output disable to output in high-Z
Notes: 1. t
, t
and t
are defined as the time at which the outputs achieve the open circuit conditions and
are not referred to output voltage levels.
2. This parameter is sampled and not 100% tested.
3. A write occurs during the overlap (t
) of a low
CS
and a low
WE
. A write begins at the later
transition of
CS
going low or
WE
going low. A write ends at the earlier transition of
CS
going high
or
WE
going high. t
WP
is measured from the beginning of write to the end of write.
4. t
CW
is measured from
CS
going low to the end of write.
5. t
AS
is measured from the address valid to the beginning of write.
6. t
WR
is measured from the earlier of
WE
or
CS
going high to the end of write cycle.
7. During this period, I/O pins are in the output state so that the input signals of the opposite phase to
the outputs must not be applied.
8. If the
CS
low transition occurs simultaneously with the
WE
low transition or after the
WE
transition,
the output remain in a high impedance state.
9. Dout is the same phase of the write data of this write cycle.
10.Dout is the read data of next address.
11.If
CS
is low during this period, I/O pins are in the output state. Therefore, the input signals of the
opposite phase to the outputs must not be applied to them.
12.In the write cycle with
OE
low fixed, t
WP
must satisfy the following equation to avoid a problem of
data bus contention. t
WP
≥
t
DW
min + t
WHZ
max
0
20
0
25
ns
1, 2, 7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HM628512CLP-5 | 4 M SRAM (512-kword x 8-bit) |
| HM628512CLP-5SL | 4 M SRAM (512-kword x 8-bit) |
| HM628512CLP-7 | 4 M SRAM (512-kword x 8-bit) |
| HM628512CLP-7SL | 4 M SRAM (512-kword x 8-bit) |
| HM628512CLRR-7SL | 4 M SRAM (512-kword x 8-bit) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HM628512CI | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit) |
| HM628512CISERIES | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述: |
| HM628512CLFP-5 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:4 M SRAM (512-kword x 8-bit) |
| HM628512CLFP-5SL | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:4 M SRAM (512-kword x 8-bit) |
| HM628512CLFP-5SLTR | 制造商:HITACHI 功能描述: 制造商:Hitachi 功能描述:512K X 8 STANDARD SRAM, 55 NS, PDSO32 |
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