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參數(shù)資料
| 型號： | HM628512BI |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 4 M SRAM (512-kword ×8-bit)(4M靜態(tài)RAM (512k字 ×8位)) |
| 中文描述： | 四米的SRAM（512 - KWord的× 8位）（4分靜態(tài)隨機存儲器（為512k字× 8位）） |
| 文件頁數(shù)： | 9/15頁 |
| 文件大?。?/td> | 86K |
| 代理商： | HM628512BI |
HM628512BI Series
9
Write Timing Waveform (2) (OE Low Fixed)
Low V
CC
Data Retention Characteristics (Ta =
–40 to +85
°
C)
Notes:
1.For L-version and 20
μ
A (max.) at Ta = –40 to +40
°
C.
2.CS controls address buffer, WE buffer, OE buffer, and Din buffer. In data retention mode, Vin
levels (address, WE, OE, I/O) can be in the high impedance state.
3.Typical values are at V
CC
= 3.0 V, Ta = +25
°
C and specified loading, and not guaranteed.
4.t
RC
= read cycle time.
Parameter
V
CC
for data retention
Data retention current
Symbol
V
DR
I
CCDR
Min
2
—
Typ
—
1*
3
Max
—
50*
1
Unit
V
μ
A
Test conditions*
2
CS
≥
V
CC
– 0.2 V, Vin
≥
0 V
V
CC
= 3.0 V, Vin
≥
0 V
CS
≥
V
CC
– 0.2 V
See retention waveform
Chip deselect to data retention time t
CDR
Operation recovery time
0
t
RC
*
4
—
—
—
—
ns
ns
t
R
Address
CS
WE
Dout
Din
t
WC
t
CW
t
WR
t
AW
t
WP
t
AS
t
WHZ
t
OW
t
OH
t
DW
t
DH
*11
*9
*10
*8
Valid Data
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HM628512BISERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| HM628512BLFP-5 | 制造商:Hitachi 功能描述:Static RAM, 512Kx8, 32 Pin, Plastic, SOP |
| HM628512BLFP-5SL | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4 M SRAM (512-kword x 8-bit) |
| HM628512BLFP-5UL | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4 M SRAM (512-kword x 8-bit) |
| HM628512BLFP7 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IC-SM-4MB CMOS SRAM |
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