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參數(shù)資料
| 型號： | HM628512BFP |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 4 M SRAM (512-kword ×8-bit)(4M靜態(tài)RAM (512k字 ×8位)) |
| 中文描述： | 四米的SRAM（512 - KWord的× 8位）（4分靜態(tài)隨機(jī)存儲器（為512k字× 8位）） |
| 文件頁數(shù)： | 4/13頁 |
| 文件大?。?/td> | 58K |
| 代理商： | HM628512BFP |
HM628512BFP Series
4
Function Table
WE
CS
OE
Mode
V
CC
current
I
SB
, I
SB1
I
CC
I
CC
I
CC
I
CC
Dout pin
Ref. cycle
×
H
×
Not selected
High-Z
—
H
L
H
Output disable
High-Z
—
H
L
L
Read
Dout
Read cycle
L
L
H
Write
Din
Write cycle (1)
L
Note:
L
L
Write
Din
Write cycle (2)
×
: H or L
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Power supply voltage
V
CC
V
T
P
T
Topr
–0.5 to +7.0
V
Voltage on any pin relative to V
SS
Power dissipation
–0.5*
1
to V
CC
+ 0.3*
2
1.0
V
W
Operating temperature
–20 to +70
°
C
°
C
°
C
Storage temperature
Tstg
–55 to +125
Storage temperature under bias
Notes: 1. –3.0 V for pulse half-width
≤
30 ns
2. Maximum voltage is 7.0 V
Tbias
–20 to +85
Recommended DC Operating Conditions
(Ta = –20 to +70
°
C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
V
CC
V
SS
V
IH
V
IL
4.5
5.0
5.5
V
0
0
0
V
Input high voltage
2.2
—
V
CC
+ 0.3
0.8
V
Input low voltage
Note:
1. –3.0 V for pulse half-width
≤
30 ns
–0.3
*1
—
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HM628512BI | 4 M SRAM (512-kword ×8-bit)(4M靜態(tài)RAM (512k字 ×8位)) |
| HM628512B | 4 M SRAM (512-kword ×8-bit)(4 M 靜態(tài)RAM(512k字×8位)) |
| HM628512CLRR-5 | 4 M SRAM (512-kword x 8-bit) |
| HM628512CLTT-5 | 4 M SRAM (512-kword x 8-bit) |
| HM628512C | Octal Buffers And Line Drivers With 3-State Outputs 20-CFP -55 to 125 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HM628512BFP-5 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4 M SRAM (512-kword x 8-bit) |
| HM628512BFP-7 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4 M SRAM (512-kword x 8-bit) |
| HM628512BFPSERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| HM628512BI | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4 M SRAM (512-kword x 8-bit) |
| HM628512BISERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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