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參數(shù)資料
| 型號： | HM628512B |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 4 M SRAM (512-kword ×8-bit)(4 M 靜態(tài)RAM(512k字×8位)) |
| 中文描述： | 四米的SRAM（512 - KWord的× 8位）（4個M靜態(tài)隨機存儲器（為512k字× 8位）） |
| 文件頁數(shù)： | 16/16頁 |
| 文件大?。?/td> | 88K |
| 代理商： | HM628512B |
HM628512B Series
16
Revision Record
Rev.
0.0
0.1
Date
Apr. 24, 1998
Nov. 19, 1998
Contents of Modification
Initial issue
DC Characteristics
I
SB1
max: 40/20
μ
A to 100/50
μ
A
Low V
CC
Data Retention Characteristics
I
CCDR
max: 20/10
μ
A to 50/15
μ
A
Change of note1 and 2
Deletion of Preliminary
Features
Change of Power dissipation
Standby: TBD (typ) to 10
μ
W (typ)
DC Characteristics
I
SB1
typ: TBD/TBD to 2/2
μ
A
Low V
CC
Data Retention Characteristics
I
CCDR
typ: TBD/TBD to 1/1
μ
A
Addition of L-UL-version
DC Characteristics
I
SB1
typ: 2/2
μ
A to 2/2/2
μ
A
I
SB1
max: 100/50
μ
A to 100/50/20
μ
A
Addition of note4
Low V
CC
Data Retention Characteristics
I
CCDR
typ: 1/1
μ
A to 1/1/1
μ
A
I
CCDR
max: 50/15
μ
A to 50/15/10
μ
A
Addition of note3
Low V
CC
Data Retention Characteristics
Correct error: t
R
unit ms to ns
Drawn by
M. Higuchi
S. kunito
Approved by
K. Imato
K. Imato
1.0
Jan. 13, 1999
S. kunito
K. Imato
2.0
Apr. 8, 1999
S. kunito
K. Makuta
3.0
Aug. 24, 1999
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| HM628512C | Octal Buffers And Line Drivers With 3-State Outputs 20-CFP -55 to 125 |
| HM628512CLP-5 | 4 M SRAM (512-kword x 8-bit) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HM628512BFP | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4 M SRAM (512-kword x 8-bit) |
| HM628512BFP-5 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4 M SRAM (512-kword x 8-bit) |
| HM628512BFP-7 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4 M SRAM (512-kword x 8-bit) |
| HM628512BFPSERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| HM628512BI | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4 M SRAM (512-kword x 8-bit) |
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