參數(shù)資料
型號(hào): HM628511HI
廠商: Hitachi,Ltd.
英文描述: 4M High Speed SRAM (512-kword x 8-bit)
中文描述: 4分高速SRAM(512 - KWord的× 8位)
文件頁(yè)數(shù): 1/13頁(yè)
文件大?。?/td> 64K
代理商: HM628511HI
HM628511HI Series
4M High Speed SRAM (512-kword
×
8-bit)
ADE-203-1035A (Z)
Rev. 1.0
Apr. 15, 1999
Description
The HM628511HI Series is a 4-Mbit high speed static RAM organized 512-k word
×
8-bit. It has realized
high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high
speed circuit designing technology. It is most appropriate for the application which requires high speed, high
density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged
in 400-mil 36-pin plastic SOJ.
Features
Single 5.0 V supply : 5.0 V
±
10 %
Access time 12 /15 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current : 160 / 140 mA (max)
TTL standby current : 60 / 50 mA (max)
CMOS standby current : 5 mA (max)
Center V
CC
and V
SS
type pinout
Temperature range: –40 to 85
°
C
相關(guān)PDF資料
PDF描述
HM628512ALRRI-8 524288-word x 8-bit High Speed CMOS Static RAM
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HM628512ALTTI-7 524288-word x 8-bit High Speed CMOS Static RAM
HM628512ALTTI-8 524288-word x 8-bit High Speed CMOS Static RAM
HM628512BLRRI-7 Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: NPN; R<sub>1</sub> (typ): 47.0 kOhm; R<sub>2</sub>: 47.0 k?; h<sub>FE</sub> (min): 70.0; V<sub>i (on)</sub> (min): 1.0 2mA / 0.3V;
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