參數(shù)資料
型號(hào): HM628127HB
廠商: Hitachi,Ltd.
英文描述: 1 M High Speed SRAM (128-kword ×8-bit)(1 M 高速 SRAM (128k字 ×8位))
中文描述: 高1米高速SRAM(128 KWord的× 8位)(1米高速靜態(tài)存儲(chǔ)器(128K的字× 8位))
文件頁(yè)數(shù): 4/14頁(yè)
文件大小: 94K
代理商: HM628127HB
HM628127HB Series
4
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage relative to V
SS
Voltage on any pin relative to V
SS
Power dissipation
V
CC
V
T
P
T
Topr
–0.5 to +7.0
V
–0.5*
1
to V
CC
+0.5
1.0*
2
/1.5*
3
V
W
Operating temperature
0 to +70
°
C
°
C
°
C
Storage temperature
Tstg
–55 to +125
Storage temperature under bias
Notes: 1. V
T
min = –2.5 V for pulse width (under shoot)
10 ns
2. At still air condition
3. At air flow
1.0 m/s
Tbias
–10 to +85
Recommended DC Operating Conditions
(Ta = 0 to +70
°
C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
V
CC
*
2
V
SS
*
3
V
IH
V
IL
4.5
5.0
5.5
V
0
0
0
V
Input voltage
2.2
V
CC
+ 0.5
0.8
V
–0.5*
1
V
Notes: 1. V
IL
min = –2.0 V for pulse width (under shoot)
10 ns
2. The supply voltage with all V
CC
pins must be on the same level.
3. The supply voltage with all V
SS
pins must be on the same level.
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