參數(shù)資料
型號: HM5165405LTT-5
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 16M X 4 EDO DRAM, 50 ns, PDSO32
封裝: 0.400 INCH, PLASTIC, TSOP2-32
文件頁數(shù): 5/35頁
文件大?。?/td> 377K
代理商: HM5165405LTT-5
HM5164405 Series, HM5165405 Series
13
Write Cycle
HM5164405/HM5165405
-5
-6
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Write command setup time
t
WCS
0—
ns
14
Write command hold time
t
WCH
8—
10
ns
Write command pulse width
t
WP
8—
10
ns
Write command to
5$6 lead time
t
RWL
13
15
ns
Write command to
&$6 lead time
t
CWL
8—
10
ns
Data-in setup time
t
DS
0—
ns
15
Data-in hold time
t
DH
8—
10
ns
15
Read-Modify-Write Cycle
HM5164405/HM5165405
-5
-6
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Read-modify-write cycle time
t
RWC
116
140
ns
5$6 to :( delay time
t
RWD
67
79
ns
14
&$6 to :( delay time
t
CWD
30
34
ns
14
Column address to
:( delay time
t
AWD
42
49
ns
14
2( hold time from :(
t
OEH
13
15
ns
Refresh Cycle
HM5164405/HM5165405
-5
-6
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
&$6 setup time (CBR refresh cycle)
t
CSR
5—
ns
&$6 hold time (CBR refresh cycle)
t
CHR
8—
10
ns
:( setup time (CBR refresh cycle)
t
WRP
0—
ns
:( hold time (CBR refresh cycle)
t
WRH
8—
10
ns
5$6 precharge to &$6 hold time
t
RPC
5—
ns
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