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參數(shù)資料
| 型號(hào)： | HM514400B |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 1,048,576-word X 4-bit Dynamic Random Access Memory |
| 中文描述： | 1,048,576字× 4位動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 |
| 文件頁數(shù)： | 7/27頁 |
| 文件大?。?/td> | 235K |
| 代理商： | HM514400B |
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DC Characteristics
(Ta = 0 to +70
°
C, V
CC
= 5 V
±
10%, V
SS
= 0 V)
HM514400B/BL, HM514400C/CL
-6
-7
-8
Parameter
Symbol
Min Max Min Max Min Max Unit Test conditions
Notes
Operating current
I
CC1
—
110 —
100 —
90
mA
RAS
,
CAS
cycling
t
RC
= min
TTL interface
RAS
,
CAS
= V
IH
Dout = High-Z
1, 2
Standby current
I
CC2
—
2
—
2
—
2
mA
—
1
—
1
—
1
mA
CMOS interface
RAS
,
CAS
≥
V
CC
– 0.2 V
Dout = High-Z
Standby current
(L-version)
I
CC2
—
100 —
100 —
100
μ
A
CMOS interface
RAS
,
CAS
=V
IH
WE
,
OE
, Address and
Din = V
IH
or V
IL
Dout = High-Z
4
RAS
-only
refresh current
I
CC3
—
110 —
100 —
90
mA
t
RC
= min
2
Standby current
I
CC5
—
5
—
5
—
5
mA
RAS
= V
IH
,
CAS
= V
IL
Dout = enable
1
CAS
-before-
RAS
refresh current
I
CC6
—
110 —
100 —
90
mA
t
RC
= min
Fast page mode
current
I
CC7
—
110 —
100 —
90
mA
t
PC
= min
1, 3
Battery back up
current
(Standby with
CBR refresh)
(L-version)
I
CC10
—
200 —
200 —
200
μ
A
t
RC
= 125
μ
s
t
RAS
≤
1
μ
s
WE
= V
IH
,
CAS
= V
IL
OE
, Address and
Din = V
IH
or V
IL
Dout = High-Z
4
Input leakage current
I
LI
I
LO
–10 10
–10 10
–10 10
μ
A
μ
A
0 V
≤
Vin
≤
7 V
0 V
≤
Vout
≤
7 V
Dout = disable
Output leakage
current
–10 10
–10 10
–10 10
Output high voltage
V
OH
V
OL
2.4
V
CC
2.4
0.4
V
CC
2.4
0.4
V
CC
V
0.4
High Iout = –5 mA
Output low voltage
0
0
0
V
Low Iout = 4.2 mA
Notes: 1. I
CC
depends on output load condition when the device is selected. I
CC
max is specified at the
output open condition.
2. Address can be changed twice or less while
RAS
= V
IL
.
3. Address can be changed once or less while
CAS
= V
IH
.
4. V
CC
– 0.2 V
≤
V
IH
≤
6.5 V and 0 V
≤
V
IL
≤
0.2 V.
7
HM514400B/BL, HM514400C/CL Series
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HM514400BL | 1,048,576-word X 4-bit Dynamic Random Access Memory |
| HM514400C | 1,048,576-word X 4-bit Dynamic Random Access Memory |
| HM514400CL | 1,048,576-word X 4-bit Dynamic Random Access Memory |
| HM5164165F | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
| HM5164165FJ-5 | 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HM514400BL | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1,048,576-word X 4-bit Dynamic Random Access Memory |
| HM514400BLR-6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM |
| HM514400BLR-7 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM |
| HM514400BLR-8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM |
| HM514400BLRR-6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM |
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