參數(shù)資料
型號(hào): HM1-6518883
廠商: Intersil Corporation
英文描述: 1024 x 1 CMOS RAM
中文描述: 1024 × 1 CMOS存儲(chǔ)器
文件頁數(shù): 5/9頁
文件大?。?/td> 220K
代理商: HM1-6518883
6-89
Timing Waveforms
TABLE 3. HM-6518/883 ELECTRICAL PERFORMANCE SPECIFICATIONS
PARAMETER
SYMBOL
CONDITIONS
NOTE
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Input Capacitance
CI
VCC = Open, f = 1MHz, All Measure-
ments Referenced to Device Ground
1
T
A
= +25
o
C
-
6
pF
Output Capacitance
CO
VCC = Open, f = 1MHz, All Measure-
ments Referenced to Device Ground
1
T
A
= +25
o
C
-
10
pF
NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters are characterized upon initial design and after
major process and/or design changes.
TABLE 4. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
METHOD
SUBGROUPS
Initial Test
100%/5004
-
Interim Test
100%/5004
1, 7, 9
PDA
100%/5004
1
Final Test
100%/5004
2, 3, 8A, 8B, 10, 11
Group A
Samples/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Groups C & D
Samples/5005
1, 7, 9
FIGURE 1. READ CYCLE
(8)
TAVEL
(9)
TELAX
TEHEL (7)
TELEH (6)
(8)
TAVEL
TELEL (17)
HIGH
NEXT
PREVIOUS
DATA
HIGH Z
HIGH Z
VALID OUTPUT LATCHED
TAVQV (2)
TSHQZ
(5)
TSLOX
(3)
(5)
TSHQZ
-1
TIME
0
1
2
3
4
5
REFERENCE
1
A
E
W
D
Q
TELQV (1)
S1,
S2
TEHEL (7)
VALID
HM-6518/883
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