參數(shù)資料
型號(hào): HLMP-EL08-X1000
英文描述: T-1 3 /4 (5 mm) Precision Optical Performance AlInGaP LED Lamps(T-1 3 /4 (5 mm)光性能精密的AlInGaP LED照明燈)
中文描述: 的T 1 3 / 4(5毫米)精密光學(xué)性能的AlInGaP LED燈具(的T 1 3 / 4(5毫米)光性能精密的鋁銦鎵磷化物發(fā)光二極管照明燈)
文件頁(yè)數(shù): 7/10頁(yè)
文件大小: 192K
代理商: HLMP-EL08-X1000
7
Electrical/Optical Characteristics at T
A
= 25
°
C
Parameter
Forward Voltage
Amber (
λ
d
= 590 nm)
Orange (
λ
d
= 605 nm)
Red-Orange (
λ
d
= 615 nm)
Red (
λ
d
= 626 nm)
Reverse Voltage
Peak Wavelength:
Amber (
λ
d
= 590 nm)
Orange (
λ
d
= 605 nm)
Red-Orange (
λ
d
= 615 nm)
Red (
λ
d
= 626 nm)
Spectral Halfwidth
Symbol
Min.
Typ.
Max.
Units
Test Conditions
I
F
= 20 mA
2.02
1.98
1.94
1.90
20
V
F
2.4
V
V
R
5
V
I
F
= 100
μ
A
Peak of Wavelength of
Spectral Distribution
at I
F
= 20 mA
592
609
621
635
17
λ
PEAK
nm
λ
1/2
nm
Wavelength Width at
Spectral Distribution
1
/
2
Power Point at
I
F
= 20 mA
Exponential Time
Constant, e
-t/
τ
V
F
= 0, f = 1 MHz
LED Junction-to-Cathode
Lead
Emitted Luminous
Power/Emitted Radiant
Power
Speed of Response
τ
s
20
ns
Capacitance
Thermal Resistance
C
40
240
pF
°
C/W
R
θ
J-PIN
Luminous Efficacy
[1]
Amber (
λ
d
= 590 nm)
Orange (
λ
d
= 605 nm)
Red-Orange (
λ
d
= 615 nm)
Red (
λ
d
= 626 nm)
480
370
260
150
η
v
lm/W
Note:
1. The radiant intensity, I
e
, in watts per steradian, may be found from the equation I
e
= I
v
/
η
v
, where I
v
is the luminous intensity in
candelas and
η
v
is the luminous efficacy in lumens/watt.
Absolute Maximum Ratings at T
A
= 25
°
C
DC Forward Current
[1,2,3]
............................................................50 mA
Peak Pulsed Forward Current
[2,3]
.............................................. 100 mA
Average Forward Current
[3]
.........................................................30 mA
Reverse Voltage (I
R
= 100
μ
A) ......................................................... 5 V
LED Junction Temperature.......................................................... 130
°
C
Operating Temperature .............................................. -40
°
C to +100
°
C
Storage Temperature .................................................. -40
°
C to +120
°
C
Dip/Drag Soldering Temperature ........................... 260
°
C for 6 seconds
Through-the-Wave Preheat Temperature......................................145
°
C
Through-the-Wave Solder Temperature ................. 245
°
C for 3 seconds
[1.59 mm (0.060 in.) below seating plane]
Notes:
1. Derate linearly as shown in Figure 4.
2. For long term performance with minimal light output degradation, drive currents
between 10 mA and 30 mA are recommended. For more information on recommended
drive conditions, please refer to Application Brief I-024 (5966-3087E).
3. Operating at currents below 1 mA is not recommended. Please contact your local
representative for further information.
s
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