參數(shù)資料
型號(hào): HLMP-EG55
英文描述: T-1 3 /4 (5 mm) Precision Optical Performance AlInGaP LED Lamps(T-1 3 /4 (5 mm) 光性能精密的AlInGaP LED照明燈)
中文描述: 的T 1 3 / 4(5毫米)精密光學(xué)性能的AlInGaP LED燈具(的T 1 3 / 4(5毫米)光性能精密的鋁銦鎵磷化物發(fā)光二極管照明燈)
文件頁數(shù): 4/7頁
文件大小: 169K
代理商: HLMP-EG55
4
Electrical/Optical Characteristics at T
A
= 25
°
C
Parameter
Forward Voltage
Amber (
λ
d
= 590 nm)
Amber (
λ
d
= 592 nm)
Red-Orange (
λ
d
= 615 nm)
Red-Orange (
λ
d
= 617 nm)
Red (
λ
d
= 626 nm)
Red (
λ
d
= 630 nm)
Reverse Voltage
Peak Wavelength
Amber (
λ
d
= 590 nm)
Amber (
λ
d
= 592 nm)
Red-Orange (
λ
d
= 615 nm)
Red-Orange (
λ
d
= 617 nm)
Red (
λ
d
= 626 nm)
Red (
λ
d
= 630 nm)
Spectral Halfwidth
Symbol
V
F
Min.
Typ.
Max.
Units
V
Test Conditions
I
F
= 20 mA
2.02
2.15
1.94
2.08
1.90
2.00
20
2.4
2.4
2.4
2.4
2.4
2.4
V
R
5
V
I
R
= 100
μ
A
Peak of Wavelength of
Spectral Distribution
at I
F
= 20 mA
λ
PEAK
nm
592
594
621
623
635
639
17
λ
1/2
nm
Wavelength Width at
Spectral Distribution
1
/
2
Power Point at
I
F
= 20 mA
Exponential Time
Constant, e
-t/
τ
s
V
F
= 0, f = 1 MHz
LED Junction-to-Cathode
Lead
Emitted Luminous
Power/Emitted Radiant
Power
Speed of Response
τ
s
20
ns
Capacitance
Thermal Resistance
C
40
240
pF
°
C/W
R
θ
J-PIN
Luminous Efficacy
[1]
Amber (
λ
d
= 590 nm)
Amber (
λ
d
= 592 nm)
Red-Orange (
λ
d
= 615 nm)
Red-Orange (
λ
d
= 617 nm)
Red (
λ
d
= 626 nm)
Red (
λ
d
= 630 nm)
η
v
lm/W
480
500
260
235
150
155
Note:
1. The radiant intensity, I
e
, in watts per steradian, may be found from the equation I
e
= I
v
/
η
v
, where I
v
is the luminous intensity in
candelas and
η
v
is the luminous efficacy in lumens/watt.
Absolute Maximum Ratings at T
A
= 25
°
C
DC Forward Current
[1,2,3]
............................................................ 50 mA
Peak Pulsed Forward Current
[2,3]
.............................................. 100 mA
Average Forward Current
[3]
......................................................... 30 mA
Reverse Voltage (I
R
= 100
μ
A) .........................................................5 V
LED Junction Temperature.......................................................... 130
°
C
Operating Temperature ..............................................–40
°
C to +100
°
C
Storage Temperature ..................................................–40
°
C to +120
°
C
Dip/Drag Solder Temperature................................ 260
°
C for 5 seconds
Through-the-Wave Solder Temperature ................. 245
°
C for 3 seconds
[1.59 mm (0.060 in.) below seating plane]
Notes:
1. Derate linearly as shown in Figure 4.
2. For long term performance with minimal light output degradation, drive currents
between 10 mA and 30 mA are recommended. For more information on recommended
drive conditions, please refer to Application Brief I-024 (5966-3087E).
3. Please contact your Agilent Technologies sales representative about operating
currents below 10 mA.
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