參數(shù)資料
型號(hào): HGTP7N60C3
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: 3.3V 72-mc CPLD
中文描述: 14 A, 600 V, N-CHANNEL IGBT, TO-220AB
文件頁數(shù): 5/11頁
文件大小: 168K
代理商: HGTP7N60C3
2-5
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
100
60
80
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
180
140
160
120
V
GE
= 15V, T
J
= 125
o
C
R
G
= 25
, L = 1mH, V
CE
= 390V
4
2
6
8
10
12
14
0
V
GE
= 12V, T
J
= 125
o
C
V
GE
= 15V, T
J
= 25
o
C
V
GE
= 12V, T
J
= 25
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
20
40
30
60
80
50
70
R
G
= 25
, L = 1mH, V
CE
= 390V
90
T
J
= 125
o
C, V
GE
= 12V OR 15V
T
J
= 25
o
C, V
GE
= 12V OR 15V
4
2
6
8
10
12
14
0
I
C
,
0
40
60
8
9
11
12
15
V
GE
, GATE TO EMITTER VOLTAGE (V)
14
80
100
120
7
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
T
J
= 125
o
C
T
J
= -55
o
C
T
J
= 25
o
C
20
13
10
V
G
,
Q
G
, GATE CHARGE (nC)
0
3
I
G(REF)
= 1mA, R
L
= 43
, T
J
= 25
o
C
V
CE
= 200V
V
CE
= 400V
6
9
12
15
5
10
15
20
30
25
35
40
0
V
CE
= 600V
I
CE
= 3.5A
0
200
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
400
125
25
150
800
E
T
,
μ
J
R
G
= 25
, L = 1mH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
600
I
CE
= 14A
I
CE
= 7A
0.1
100
R
G
, GATE RESISTANCE (
)
1
10
1000
E
T
,
10
T
J
= 125
o
C, L = 1mH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 3.5A
I
CE
= 7A
I
CE
= 14A
HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4
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