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參數(shù)資料
| 型號(hào)： | HGTP7N60B3 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 72 MACROCELL 3.3 VOLT ISP CPLD |
| 中文描述： | 14 A, 600 V, N-CHANNEL IGBT |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大小： | 168K |
| 代理商： | HGTP7N60B3 |
2-4
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0
1.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
5
10
1.5
2.0
3.0
25
20
T
J
= 125
o
C
T
J
= 150
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 12V
30
T
J
= 25
o
C
0.5
2.5
15
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
T
J
= 150
o
C
T
J
= 25
o
C
0
5
10
25
20
30
15
0
1.0
1.5
2.0
3.0
0.5
2.5
T
J
= 125
o
C
E
O
,
μ
J
300
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
200
400
0
4
2
6
8
10
12
14
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 25
, L = 1mH, V
CE
= 390V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
100
0
500
300
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
μ
J
0
50
200
100
250
350
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
150
R
G
= 25
, L = 1mH, V
CE
= 390V
4
2
6
8
10
12
14
0
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
8
14
16
T
J
= 125
o
C, V
GE
= 15V
R
G
= 25
, L = 1mH, V
CE
= 390V
12
10
T
J
= 25
o
C, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 12V
T
J
= 25
o
C, V
GE
= 12V
4
2
6
8
10
12
14
0
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
0
20
10
40
30
R
G
= 25
, L = 1mH, V
CE
= 390V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
4
2
6
8
10
12
14
0
HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP7N60B3D | 功能描述:IGBT 晶體管 PWR IGBT 14A 600V N-CHANNEL RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP7N60C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP7N60C3D | 功能描述:IGBT 晶體管 14a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP7N60C3D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 600V 14A TO-220 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT, 600V, 14A, TO-220 |
| HGTP7N60C3D | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR |
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