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參數(shù)資料
| 型號： | HGTP12N60C3 |
| 廠商： | Harris Corporation |
| 英文描述： | 24A, 600V, UFS Series N-Channel IGBTs |
| 中文描述： | 第24A，600V的，的ufs系列N溝道IGBT的 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 131K |
| 代理商： | HGTP12N60C3 |
3-32
FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
Typical Performance Curves
(Continued)
t
D
,
10
20
30
5
10
15
20
I
CE
, COLLECTOR-EMITTER CURRENT (A)
100
25
30
50
V
GE
= 10V
V
GE
= 15V
T
J
= 150
o
C, R
G
= 25
, L = 100
μ
H, V
CE(PK)
= 480V
I
CE
, COLLECTOR-EMITTER CURRENT (A)
t
D
,
400
300
200
100
5
10
15
20
25
30
T
J
= 150
o
C, R
G
= 25
, L = 100
μ
H, V
CE(PK)
= 480V
V
GE
= 10V
V
GE
= 15V
I
CE
, COLLECTOR-EMITTER CURRENT (A)
t
R
,
5
10
100
5
10
15
20
25
30
V
GE
= 15V
V
GE
= 10V
200
T
J
= 150
o
C, R
G
= 25
, L = 100
μ
H, V
CE(PK)
= 480V
I
CE
, COLLECTOR-EMITTER CURRENT (A)
t
F
,
100
90
80
5
10
15
20
25
30
200
300
T
J
= 150
o
C, R
G
= 25
, L = 100
μ
H, V
CE(PK)
= 480V
V
GE
= 10V or 15V
I
CE
, COLLECTOR-EMITTER CURRENT (A)
0
5
10
15
20
E
O
,
V
GE
= 15V
0.5
1.0
1.5
2.0
25
30
V
GE
= 10V
T
J
= 150
o
C, R
G
= 25
, L = 100
μ
H, V
CE(PK)
= 480V
I
CE
, COLLECTOR-EMITTER CURRENT (A)
E
O
,
5
10
15
20
25
30
0.5
1.0
1.5
2.0
2.5
3.0
0
T
J
= 150
o
C, R
G
= 25
, L = 100
μ
H, V
CE(PK)
= 480V
V
GE
= 10V or 15V
HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S
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| HGT1S12N60C3 | 24A, 600V, UFS Series N-Channel IGBTs |
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| HGTP12N60D1 | 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP12N60C3D | 功能描述:IGBT 晶體管 HGTP12N60C3D RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP12N60C3R | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP12N60D1 | 制造商:Harris Corporation 功能描述: |
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| HGTP14N36G3VL | 功能描述:IGBT 晶體管 14a 380V Logic Level RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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