參數(shù)資料
型號: HGTH20N50C1D
廠商: HARRIS SEMICONDUCTOR
元件分類: IGBT 晶體管
英文描述: 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
中文描述: 20 A, 500 V, N-CHANNEL IGBT, TO-218AC
文件頁數(shù): 5/6頁
文件大?。?/td> 35K
代理商: HGTH20N50C1D
3-80
HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D
FIGURE 13. TYPICAL CLAMPED INDUCTIVE TURN-OFF
SWITCHING LOSS/CYCLE
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS AT CON-
STANT GATE CURRENT (REFER TO APPLICATION
NOTES AN7254 AND AN7260)
FIGURE 15. TYPICAL DIODE EMITTER-COLLECTOR
VOLTAGE vs CURRENT
FIGURE 16. TYPICAL DIODE REVERSE RECOVERY TIME
Test Circuit
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
Typical Performance Curves
(Continued)
1000
900
800
700
600
500
400
300
200
100
0
+25
+50
T
J
, JUNCTION TEMPERATURE (
o
C)
+75
+100
+125
+150
W
O
,
μ
J
10A, 40C1D/50C1D
10A, 40E1D/50E1D
20A, 40C1D/50C1D
20A, 40E1D/50E1D
V
GE
= 10V, V
CE(CLP)
= 300V
L = 25
μ
H, R
G
= 25
GATE
EMITTER
VOLTAGE
V
CC
= BV
CES
500
375
250
125
0
10
8
6
4
2
0
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
TIME (
μ
s)
V
C
,
V
G
,
NOTE: For Turn-Off gate currents in excess of 3mA. V
Turn-Off
is not accurately represented by this normalization.
R
= 25
I
G
(REF) = 0.76mA
V
GE
= 10V
COLLECTOR-EMITTER VOLTAGE
V
CC
= 0.25 BV
CES
100
10
1.0
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V
EC
, EMITTER-COLLECTOR VOLTAGE (V)
I
E
,
T
J
= +150
o
C
T
J
= +100
o
C
T
J
= +25
o
C
T
J
= -50
o
C
t
R
,
I
EC
, EMITTER-COLLECTOR CURRENT (A)
60
50
40
30
20
10
0
2
4
6
8
10
12
14
16
18
20
TYPICAL REVERSE RECOVERY TIME
dI
EC
/dt
100A/
μ
s
V
R
= 30V, T
J
= +25
o
C
20V
0V
R
GEN
= 50
1/R
G
= 1/R
GEN
+ 1/R
GE
R
GE
= 50
L = 25
μ
H
V
CE(CLP)
=
300V
R
L
= 4
V
CC
100V
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