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參數(shù)資料
| 型號： | HGTG40N60B3 |
| 廠商： | Harris Corporation |
| 英文描述： | 70A, 600V, UFS Series N-Channel IGBT |
| 中文描述： | 第70A，600V的，的ufs系列N溝道IGBT的 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 65K |
| 代理商： | HGTG40N60B3 |
9-4
Specifications HGTG40N60B3
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
TYP
MAX
Collector-Emitter Breakdown Voltage
BV
CES
I
CE
= 250
μ
A, V
GE
= 0V
600
-
-
V
Collector-Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
J
= +25
o
C
-
-
250
A
V
CE
= BV
CES
T
J
= +150
o
C
-
-
7.5
mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
CE
= 40A
V
GE
= 15V
T
J
= +25
o
C
-
1.4
2.0
V
T
J
= +150
o
C
-
1.5
2.3
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
CE
= 250A,
V
CE
= V
GE
T
J
= +25
o
C
3.0
5
6.0
V
Gate-Emitter Leakage Current
I
GES
V
GE
=
±
20V
-
-
±
300
nA
Latching Current
I
L
T
J
= +150
o
C
V
CE(PK)
= 0.8 BV
CES
V
GE
= 15V
R
G
= 3
L = 45
μ
H
160
-
-
A
Gate-Emitter Plateau Voltage
V
GEP
I
CE
= 40A, V
CE
= 0.5 BV
CES
-
8.0
-
V
On-State Gate Charge
Q
G(ON)
I
CE
= 40A,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
240
320
nC
V
GE
= 20V
-
350
450
nC
Current Turn-On Delay Time
t
D(ON)I
T
J
= +150
o
C
I
CE
= 40A
V
CE(PK)
= 0.8 BV
CES
V
GE
= 15V
R
G
= 3
L = 100
μ
H
-
50
-
ns
Current Rise Time
t
RI
-
40
-
ns
Current Turn-Off Delay Time
t
D(OFF)I
-
350
435
ns
Current Fall Time
t
FI
-
160
200
ns
Turn-On Energy
E
ON
-
1400
-
J
Turn-Off Energy (Note 1)
E
OFF
-
3300
-
J
Thermal Resistance
R
θ
JC
-
-
0.43
o
C/W
NOTE:
1. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). The HGTG40N60B3 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG40N60B3 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT IC |
| HGTG40N60B3_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTG40N60B3_Q | 功能描述:IGBT 晶體管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG40N60B3R4729 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG40N60C3 | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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