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參數(shù)資料
| 型號： | HGTG30N120CN |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 75A, 1200V, NPT Series N-Channel IGBT(75A, 1200V, NPT 系列N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 30 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 81K |
| 代理商： | HGTG30N120CN |
5
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
10
15
30
5
300
25
20
100
200
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
45
40
35
600
400
500
60
55
50
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 3
, L = 1mH, V
CE
= 960V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
10
15
30
5
0
300
400
25
20
100
200
500
600
45
40
35
T
J
= 150
o
C, V
GE
= 12V AND 15V
T
J
= 25
o
C, V
GE
= 12V AND 15V
60
55
50
700
800
R
G
= 3
, L = 1mH, V
CE
= 960V
I
C
,
0
100
200
13
7
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
300
400
14
15
500
T
C
= 25
o
C
T
C
= -55
o
C
T
C
= 150
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 20V
V
G
,
Q
G
, GATE CHARGE (nC)
8
4
100
2
6
0
0
250
50
150
300
200
V
CE
= 1200V
V
CE
= 800V
V
CE
= 400V
14
10
12
16
I
G(REF)
= 2mA, R
L
= 20
, T
C
= 25
o
C
C
RES
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
2
C
C
IES
4
6
8
10
FREQUENCY = 1MHz
C
OES
I
C
,
0
5
10
15
2.5
0
0.5
1.0
2.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1.5
20
25
30
3.0
35
40
DUTY CYCLE < 0.5%, T
C
= 110
o
C
PULSE DURATION = 250
μ
s
V
GE
= 10V
V
GE
= 15V
HGTG30N120CN
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| HGTG5N120CND | 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(25A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
| HGTP5N120CND | 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(25A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG30N120D2 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:30A, 1200V N-Channel IGBT |
| HGTG30N60A4 | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG30N60A4 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| HGTG30N60A4D | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG30N60A4D | 制造商:Intersil Corporation 功能描述:IGBT TO-247 |
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