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參數(shù)資料
| 型號： | HGTG20N120CN |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 63A, 1200V, NPT Series N-Channel IGBT(63A, 1200V, NPT 系列N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 20 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 83K |
| 代理商： | HGTG20N120CN |
4
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0
2
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
20
40
6
8
10
80
100
60
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 12V
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
40
60
80
0
2
4
6
8
20
100
0
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
E
O
,
10
6
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
8
4
2
15
10
5
12
25
30
0
35
40
T
J
= 150
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 3
, L = 1mH, V
CE
= 960V
20
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
6
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
0
15
10
5
1
4
2
5
7
8
25
30
R
G
= 3
, L = 1mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 150
o
C, V
GE
= 12V OR 15V
35
40
3
20
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
5
10
15
20
25
30
35
15
40
25
30
35
40
R
G
= 3
, L = 1mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
20
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
10
0
20
80
60
30
5
40
25
20
15
40
35
100
120
R
G
= 3
, L = 1mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
T
J
= 25
o
C OR T
J
= 150
o
C, V
GE
= 15V
HGTG20N120CN
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG20N120CND | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG20N120E2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG20N50C1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG20N60A4 | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG20N60A4 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
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