參數資料
型號: HGTG18N120BND
廠商: HARRIS SEMICONDUCTOR
元件分類: IGBT 晶體管
英文描述: CAT6A PVC GRAY F/UTP BULK CABLE
中文描述: 18 A, 1200 V, N-CHANNEL IGBT, TO-247
文件頁數: 5/7頁
文件大小: 84K
代理商: HGTG18N120BND
5
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
10
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
5
200
15
100
150
t
d
,
30
350
250
300
40
35
R
G
= 3
, L = 1mH, V
CE
= 960V
25
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 12V, V
GE
= 15V, T
J
= 150
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
10
5
25
100
150
15
50
200
250
30
20
40
35
R
G
= 3
, L = 1mH, V
CE
= 960V
125
75
175
225
25
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 150
o
C, V
GE
= 12V OR 15V
I
C
,
0
50
13
6
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
100
150
14
15
200
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -55
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 20V
7
V
G
,
Q
G
, GATE CHARGE (nC)
5
20
0
0
100
50
150
V
CE
= 400V
V
CE
= 800V
I
G(REF)
= 2mA, R
L
= 33.3
, T
C
= 25
o
C
V
CE
= 1200V
10
15
200
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
0
5
10
15
20
25
0
1
C
IES
2
4
5
6
FREQUENCY = 1MHz
3
C
OES
C
RES
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
10
25
0
1
0
2
5
30
DUTY CYCLE < 0.5%, T
C
= 110
o
C
PULSE DURATION = 250
μ
s
20
15
3
4
V
GE
= 10V
5
V
GE
= 15V OR 12V
HGTG18N120BN
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