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參數(shù)資料
| 型號(hào)： | HGTG18N120BN |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | CAT6A PVC WHITE F/UTP BULK CABLE |
| 中文描述： | 54 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 84K |
| 代理商： | HGTG18N120BN |
4
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0
2
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
20
40
6
8
10
60
80
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 12V
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
40
60
80
0
2
4
6
8
10
20
100
0
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
E
O
,
10
6
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
8
4
2
15
10
5
12
25
30
0
35
40
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 3
, L = 1mH, V
CE
= 960V
20
3.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
0.5
15
10
5
1.0
2.5
1.5
3.0
4.0
4.5
25
30
R
G
= 3
, L = 1mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 150
o
C, V
GE
= 12V OR 15V
35
40
2.0
20
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
5
10
15
20
25
30
35
15
40
25
30
35
40
R
G
= 3
, L = 1mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
20
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
10
0
20
80
60
30
5
40
25
20
15
40
35
100
120
R
G
= 3
, L = 1mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
T
J
= 25
o
C OR T
J
= 150
o
C, V
GE
= 15V
HGTG18N120BN
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTG18N120BND | CAT6A RISER, GRAY, SPOOL BULK CABLE |
| HGTG20N120CND | 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(63A, 1200V, NPT 系列帶超快二極管的N溝道絕緣柵雙極型晶體管) |
| HGTG20N120CN | 63A, 1200V, NPT Series N-Channel IGBT(63A, 1200V, NPT 系列N溝道絕緣柵雙極型晶體管) |
| HGTG20N60A4 | 600V, SMPS Series N-Channel IGBTs |
| HGTG20N60A4 | 600V, SMPS Series N-Channel IGBTs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG18N120BND | 功能描述:IGBT 晶體管 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG18N120BND_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG201N100E2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG20N100D2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG20N120 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:34A, 1200V N-Channel IGBT |
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