參數(shù)資料
型號(hào)： HGTG18N120BN
廠商： HARRIS SEMICONDUCTOR
元件分類： IGBT 晶體管
英文描述： CAT6A RISER, YELLOW, SPOOBULK CABLE
中文描述： 18 A, 1200 V, N-CHANNEL IGBT, TO-247
文件頁數(shù)： 3/7頁
文件大小： 84K
代理商： HGTG18N120BN
3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C
I
CE
= 18A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 3
L = 1mH
Test Circuit (Figure 18)
-
21
26
ns
Current Rise Time
t
rI
-
17
22
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
205
240
ns
Current Fall Time
t
fI
-
140
200
ns
Turn-On Energy (Note 5)
E
ON1
-
0.85
1.1
mJ
Turn-On Energy (Note 5)
E
ON2
-
3.7
4.9
mJ
Turn-Off Energy (Note 4)
E
OFF
-
2.6
3.1
mJ
Thermal Resistance Junction To Case
R
θ
JC
-
-
0.32
o
C/W
NOTES:
4. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is
the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in Fig. 18.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
0
60
25
75
100
125
150
40
30
20
10
V
GE
= 15V
50
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
80
0
I
C
,
20
40
600
800
400
200
1000
1200
0
100
120
60
T
J
= 150
o
C, R
G
= 3
, V
GE
= 15V, L = 200
μ
H
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 150
o
C, R
G
= 3
, L = 1mH, V
CE
= 960V
f
M
,
5
1
10
40
20
50
10
100
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 0.32
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
30
T
C
= 75
o
C, V
GE
= 15V, IDEAL DIODE
T
C
75
o
C
75
o
C
V
GE
15V
12V
110
o
C
12V
15V
110
o
C
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
12
13
14
15
16
5
10
15
20
25
50
100
150
200
300
t
SC
I
SC
30
250
V
CE
= 960V, R
G
= 3
, T
J
= 125
o
C
HGTG18N120BN
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTG18N120BND 功能描述:IGBT 晶體管 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTG18N120BND_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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HGTG20N100D2 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTG20N120 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:34A, 1200V N-Channel IGBT
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