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參數(shù)資料
| 型號： | HGTD8P50G1 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Mechanism, 2-inch w/front paper feed and partial cutter |
| 中文描述： | 12 A, 500 V, P-CHANNEL IGBT, TO-251AA |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 110K |
| 代理商： | HGTD8P50G1 |
5
HGTD8P50G1, HGTD8P50G1S
FIGURE 13. LATCHING CURRENT AS A FUNCTION OF
JUNCTION TEMPERATURE
FIGURE 14. GATE THRESHOLD VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL
IMPEDANCE, JUNCTION TO CASE
FIGURE 16. LATCHING CURRENT AS A FUNCTION OF
COLLECTOR-EMITTER VOLTAGE
Test Circuits
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUITS
Typical Performance Curves
(Continued)
FIG. 17, CIRCUIT 1
V
CE
= -350V, V
GE
= -15V, R
G
= 25
, L = 100
μ
H
I
C
,
-3
-4
-5
-6
-7
-50
0
50
100
150
T
C
, CASE TEMPERATURE (
o
C)
C
-40
0
T
C
, CASE TEMPERATURE (
o
C)
40
80
120
160
V
T
,
4.5
5.5
6.0
6.5
5.0
V
CE
= V
GE
, I
CE
= 1.0mA
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
R
o
C
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
0.01
P
DS
t
1
t
2
NOTES:
1. DUTY FACTOR, D =
t
1
/
t
2
2.PEAK T
J
= (P
DS
x Z
θ
JC
x R
θ
JC
) + T
A
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
0
10
-1
10
-3
10
-2
0
200
100
300
400
500
0
3
6
9
12
15
I
C
,
V
CE
, COLLECTOR-EMITTER (V)
T
C
= 25
o
C, V
GE
= -15V, R
G
= 25
, L = 100
μ
H
FIG. 17, CIRCUIT 1
C
R
G
= 25
L = 100
μ
H
+
-
V
CC
= 350V
CIRCUIT 1
R
G
= 25
L = 100
μ
H
+
-
C
1
V
CC
= 350V
D
1
D
1
=
GSI T
ran
Z
orb
CIRCUIT 2
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PDF描述 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTD8P50G1S | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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| HGTG10N120BND | 功能描述:IGBT 晶體管 35A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG10N120BND | 制造商:Fairchild Semiconductor Corporation 功能描述:SINGLE IGBT 1.2KV 35A |
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