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參數(shù)資料
| 型號： | HGTD2N120CNS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 13A, 1200V, NPT Series N-Channel IGBT |
| 中文描述： | 13 A, 1200 V, N-CHANNEL IGBT, TO-252AA |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 89K |
| 代理商： | HGTD2N120CNS |
4
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
f
M
,
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
5
50
100
200
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 1.2
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
C
V
GE
15V
12V
110
o
C
110
o
C
T
J
= 150
o
C, R
G
= 51
, V
GE
= 15V, L = 5mH
1
3
4
2
IDEAL DIODE
T
C
= 75
o
C,V
GE
= 15V
T
C
75
o
C 15V
V
GE
75
o
C 12V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
20
30
40
50
10
0
20
30
40
50
10
0
10
14
15
13
12
11
V
CE
= 840V, R
G
= 51
, T
J
= 125
o
C
I
SC
t
SC
0
1
2
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
2
4
3
4
5
10
8
6
T
C
= 25
o
C
T
C
= 150
o
C
250
μ
S PULSE TEST
DUTY CYCLE <0.5%, V
GE
= 12V
T
C
= -55
o
C
6
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
2
4
6
0
1
2
3
4
5
8
0
10
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -55
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
250
μ
s PULSE TEST
E
O
,
μ
J
1500
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1000
500
2.5
1.5
3.5
3.0
2.0
1.0
4.0
4.5
5.0
2000
0
T
J
= 150
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
μ
J
3.0
2.0
1.5
2.5
3.5
1.0
300
200
400
500
4.5
4.0
600
700
800
900
5.0
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 12V OR 15V
T
J
= 25
o
C, V
GE
= 12V OR 15V
100
HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS
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| HGTD2N120CNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 13A I(C) | TO-252AA |
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| HGTD3N60A4S9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-252AA |
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