- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383057 > HGTD1N120BNS (HARRIS SEMICONDUCTOR) 5.3A, 1200V, NPT Series N-Channel IGBT PDF資料下載
參數(shù)資料
| 型號： | HGTD1N120BNS |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5.3A, 1200V, NPT Series N-Channel IGBT |
| 中文描述： | 5.3 A, 1200 V, N-CHANNEL IGBT, TO-252AA |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 71K |
| 代理商： | HGTD1N120BNS |
1
HGTD1N120BNS, HGTP1N120BN
5.3A, 1200V, NPT Series N-Channel IGBT
The HGTD1N120BNS and HGTP1N120BN are
N
on-
P
unch
T
hrough (NPT) IGBT designs. They are new members of the
MOS gated high voltage switching IGBT family. IGBTs
combine the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49316.
Symbol
Features
5.3A, 1200V, T
C
= 25
o
C
1200V Switching SOA Capability
Typical E
OFF
. . . . . . . . . . . . . . . . . . . 120
μ
J at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Avalanche Rated
Temperature Compensating
SABER Model
Thermal Impedance
SPICE Model
www.intersil.com
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB
JEDEC TO-252AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTD1N120BNS
TO-252AA
1N120B
HGTP1N120BN
TO-220AB
1N120BN
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA in tape and reel, i.e. HGTD1N120BNS9A
C
E
G
ECG
COLLECTOR
(FLANGE)
E
COLLECTOR
(FLANGE)
G
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
January 2000
File Number
4649.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
SABER is a trademark of Analogy, Inc.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTD1N120CNS | 6.2A, 1200V, NPT Series N-Channel IGBT |
| HGTP1N120BN | 5.3A, 1200V, NPT Series N-Channel IGBT(5.3A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
| HGTD1N120BNS | 5.3A, 1200V, NPT Series N-Channel IGBT |
| HGTD1N120BNS9A | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 2.7A I(C) | TO-252AA |
| HGTG15N120C3D | 35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTD1N120BNS9A | 功能描述:IGBT 晶體管 5.3a 1200v N-Ch IGBT NPT Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTD1N120CNS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6.2A, 1200V, NPT Series N-Channel IGBT |
| HGTD1N120CNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 6.2A I(C) | TO-252AA |
| HGTD2N120BNS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT |
| HGTD2N120BNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 12A I(C) | TO-252AA |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。