參數(shù)資料
型號(hào): HGT1S7N60B3DS
廠商: HARRIS SEMICONDUCTOR
元件分類: IGBT 晶體管
英文描述: 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
中文描述: 14 A, 600 V, N-CHANNEL IGBT, TO-263AB
封裝: PLASTIC PACKAGE-4
文件頁數(shù): 6/7頁
文件大小: 94K
代理商: HGT1S7N60B3DS
6
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
FIGURE 17. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 18. RECOVERY TIMES vs FORWARD CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
200
C
400
600
800
1000
1200
FREQUENCY = 1MHz
C
IES
C
OES
C
RES
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
0
10
1
10
-4
10
-1
10
-2
10
0
Z
θ
J
,
10
-1
10
-2
t
1
t
2
P
D
SINGLE PULSE
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
I
E
,
V
EC
, EMITTER TO COLLECTOR VOLTAGE (V)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1
5
10
40
-55
o
C
150
o
C
25
o
C
1
2
3
4
5
6
8
10
5
10
15
20
25
30
I
EC
, FORWARD CURRENT (A)
t
r
,
t
rr
t
a
t
b
T
J
= 25
o
C, dI
EC
/dt = 200A/
μ
s
HGTP7N60B3D, HGT1S7N60B3DS
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