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參數(shù)資料
| 型號： | HFB35HB20PBF |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 35 A, SILICON, RECTIFIER DIODE, TO-254AA |
| 封裝： | HERMETIC SEALED PACKAGE-3 |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 170K |
| 代理商： | HFB35HB20PBF |
www.irf.com
5
HFB35HB20
4. Qrr -Areaundercurvedefinedbytrr
and IRRM
trr X IRRM
Qrr =
2
5.di(rec)M/dt-Peakrateofchangeof
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Fig. 9 - Reverse Recovery Parameter Test Circuit
ta
tb
trr
Q rr
IF
I RRM
0.5
di(rec)M/dt
0.75 IRRM
5
4
3
2
0
1
di /dt
f
1. dif/dt-Rateofchangeofcurrent
through zero crossing
2.IRRM-Peakreverserecoverycurrent
3.trr-Reverserecoverytimemeasured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
REVERSE RECOVERY CIRCUIT
IRFP250
D.U.T.
L = 70H
V = 200V
R
0.01
G
D
S
dif/dt
ADJUST
Case Outline and Dimensions — TO-254AA
NOTES:
1. DIMENS IONING& TOLERANCINGPER AS ME Y14.5M-1994.
2. ALL DIMENSIONS ARE S HOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENS ION: INCH.
4. CONFORMS TO JEDEC OUTLINE TO-254AA.
6.60 [.260]
6.32 [.249]
1.27 [.050]
1.02 [.040]
0.12 [.005]
13.84 [.545]
13.59 [.535]
13.84 [.545]
13.59 [.535]
3.81 [.150]
2X
17.40 [.685]
16.89 [.665]
A
1.14 [.045]
0.89 [.035]
0.36 [.014]
B A
3X
B
20.32 [.800]
20.07 [.790]
3.78 [.149]
3.53 [.139]
12
3
17.40 [.685]
16.89 [.665]
3.81 [.150]
0.84 [.033]
MAX.
C
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 07/2006
PIN ASSIGNMENTS
1 = CATHODE
2 = N/C
3 = ANODE
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