參數資料
型號: HDD16M64D8W-13A
廠商: Hanbit Electronics Co.,Ltd.
英文描述: DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., DIMM,
中文描述: DDR SDRAM內存模塊128Mbyte(16Mx64bit)根據on16Mx8,4Banks,4K的參考。,內存,
文件頁數: 7/10頁
文件大?。?/td> 211K
代理商: HDD16M64D8W-13A
HANBit
HDD16M64D8W
URL : www.hbe.co.kr 7 HANBit Electronics Co.,Ltd.
REV 2.0 (November.2002)
Clock high level width
t
CH
0.45
0.55
0.45
0.55
0.45
0.55
t
CK
Clock low level width
t
CL
0.45
0.55
0.45
0.55
0.45
0.55
t
CK
DQS-out access time from CK/CK
t
DQSCK
-0.8
+0.8
-0.75
+0.75
-0.75
+0.75
ns
Output data access time from CK/CK
t
AC
-0.8
+0.8
-0.75
+0.75
-0.75
+0.75
ns
Data strobe edge to ouput data edge
t
DQSQ
-
+0.6
-
+0.5
-
+0.5
ns
Read Preamble
t
RPRE
0.9
1.1
0.9
1.1
0.9
1.1
t
CK
Read Postamble
t
RPST
0.4
0.6
0.4
0.6
0.4
0.6
t
CK
Data out high impedence time from CK-/CK
t
HZQ
-0.8
+0.8
-0.75
+0.75
-0.75
+0.75
ns
2
CK to valid DQS-in
t
DQSS
0.75
1.25
0.75
1.25
0.75
1.25
t
CK
DQS-in setup time
t
WPRES
0
0
0
ns
3
DQS-in hold time
t
WPREH
0.25
0.25
0.25
t
CK
DQS-in falling edge to CK rising-setup time
t
DSS
0.2
0.2
0.2
t
CK
DQS-in falling edge to CK rising hold time
t
DSH
0.2
0.2
0.2
t
CK
DQS-in high level width
t
DQSH
0.35
0.35
0.35
t
CK
DQS-in low level width
t
DQSL
0.35
0.35
0.35
t
CK
DQS-in cycle time
t
DSC
0.9
1.1
0.9
1.1
0.9
1.1
t
CK
Address and Control Input setup time
t
IS
1.1
0.9
0.9
ns
Address and Control Input hold time
t
IH
1.1
0.9
0.9
ns
Mode register set cycle time
t
MRD
16
15
15
ns
DQ & DM setup time to DQS
t
DS
0.6
0.5
0.5
ns
DQ & DM hold time to DQS
t
DH
0.6
0.5
0.5
ns
DQ & DM input pulse width
t
DIPW
2
1.75
1.75
ns
Power down exit time
t
PDEX
10
10
10
ns
Exit self refresh to write command
t
XSW
116
95
ns
Exit self refresh to bank active command
t
XSA
80
75
75
ns
Exit self refresh to read command
t
XSR
200
200
200
Cycle
Refresh interval time
t
REF
15.6
15.6
15.6
us
1
Output DQS valid window
t
QH
0.35
0.35
0.35
t
CK
DQS write postamble time
t
WPST
0.25
0.25
0.25
t
CK
4
Notes :
1. Maximum burst refresh cycle : 8
2. The specific requirement is that DQS be valid(High or Low) on or before this CK edge. The case shown(DQS going from
High_Z to logic Low) applies when no writes were previously in progress on the bus. If a previous write was in progress,
DQS could be High at this time, depending on t
.
3. The maximum limit for this parameter is not a device limit. The device will operate with a great value for this parameter,
but system performance (bus turnaround) will degrade accordingly.
4. A write command can be applied with t
RCD
satisfied after this command.
5. For registered DIMMs, t
and t
are
45% of the period including both the half period jitter (t
JIT
(HP) ) of the PLL and the half jitter due to
crosstalk (t
JIT
(crosstalk) ) on the DIMM.
6. Input Setup/Hold Slew Rate Derating
Input Setup/Hold Slew Rate
Δ
t
IS
Δ
t
IH
(V/ns)
(ps)
(ps)
0.5
0
0
0.4
+50
+50
0.3
+100
+100
相關PDF資料
PDF描述
HDD16M64D8W-13B DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., DIMM,
HDD16M64F8 DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., SMM,
HDD16M64F8-10A DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., SMM,
HDD16M64F8-13A DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., SMM,
HDD16M64F8-13B DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., SMM,
相關代理商/技術參數
參數描述
HDD16M64D8W-13B 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., DIMM,
HDD16M64F8 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., SMM,
HDD16M64F8-10A 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., SMM,
HDD16M64F8-13A 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., SMM,
HDD16M64F8-13B 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., SMM,