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參數(shù)資料
| 型號： | HDD16M64D8W-10A |
| 廠商： | Hanbit Electronics Co.,Ltd. |
| 英文描述： | DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., DIMM, |
| 中文描述： | DDR SDRAM內(nèi)存模塊128Mbyte（16Mx64bit）根據(jù)on16Mx8，4Banks，4K的參考。，內(nèi)存， |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 211K |
| 代理商： | HDD16M64D8W-10A |
HANBit
HDD16M64D8W
URL : www.hbe.co.kr 4 HANBit Electronics Co.,Ltd.
REV 2.0 (November.2002)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNTE
Voltage on any pin relative to Vss
V
IN
, V
OUT
-0.5 ~ 3.6
V
Voltage on V
DD
supply relative to Vss
V
DD
-1.0 ~ 3.6
V
Voltage on V
DDQ
supply relative to Vss
V
DDQ
-0.5 ~ 3.6
V
Storage temperature
T
STG
-55 ~ +150
°
C
Power dissipation
P
D
8.0
W
Short circuit current
Notes:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
POWER & DC OPERATING CONDITIONS
(Recommended operating conditions (Voltage referenced to Vss = 0V, T
A
= 0 to 70
°
C) )
I
OS
50
mA
PARAMETER
SYMBOL
MIN
MAX
UNIT
NOTE
Supply Voltage
V
DD
2.3
2.7
V
I/O Supply Voltage
V
DDQ
2.3
2.7
V
I/O Reference Voltage
V
REF
V
DDQ
/2-50mV
V
DDQ
/2+50mV
V
1
I/O Termination Voltage(system)
V
TT
V
REF
–
0.04
V
REF
+ 0.04
V
2
Input High Voltage
V
IH
(DC)
V
REF
+ 0.15
V
REF
+ 0.3
V
4
Input Low Voltage
V
IL
(DC)
-0.3
V
REF
- 0.15
V
4
Input Voltage Level, CK and /CK inputs
V
IN
(DC)
-0.3
V
DDQ
+ 0.3
V
Input Differential Voltage, CK and /CK inputs
V
ID
(DC)
0.3
V
DDQ
+ 0.6
V
3
Input crossing point voltage, CK and CK inputs
V
Ix
(DC)
1.15
1.35
V
5
Input leakage current
I
LI
-2
2
uA
Output leakage current
I
OZ
-5
5
uA
Output High current (V
OUT
= 1.95V)
I
OH
-16.8
mA
Output Low current (V
OUT
= 0.35V)
I
OL
16.8
mA
Output High Current(Half strengh driver)
I
OH
-9
mA
Output High Current(Half strengh driver)
Notes
1. Includes
±
25mV margin for DC offset on
V
REF
, and a combined total of
±
50mV margin for all AC noise and DC offset on
V
REF
,
bandwidth limited to 20MHz. The DRAM must accommodate DRAM current spikes on
V
REF
and internal DRAM noise coupled
TO
V
REF
, both of which may result in
V
REF
noise.
V
REF
should be de-coupled with an inductance of
￡
3nH.
2. V
TT
is not applied directly to the device. V
TT
is a system supply for signal termination resistors, is expected to be set equal to
V
REF
, and must track variations in the DC level of
V
REF
3. V
is the magnitude of the difference between the input level on CK and the input level on CK.
4. These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in
simulation. The AC and DC input specifications are relative to a
V
REF
envelop that has been bandwidth limited to 200MHZ.
5. The value of V
is expected to equal 0.5*V
of the transmitting device and must track variations in the dc level of the same.
6. These charactericteristics obey the SSTL-2 class II standards.
I
OL
9
mA
相關(guān)PDF資料 |
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| HDD16M64D8W-13A | DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., DIMM, |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HDD16M64D8W-13A | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., DIMM, |
| HDD16M64D8W-13B | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., DIMM, |
| HDD16M64F8 | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., SMM, |
| HDD16M64F8-10A | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., SMM, |
| HDD16M64F8-13A | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., SMM, |
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