參數(shù)資料
型號: HDD16M64B8-13A
廠商: Hanbit Electronics Co.,Ltd.
英文描述: DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref. SO-DIMM
中文描述: DDR SDRAM內存模塊128Mbyte(16Mx64bit)根據(jù)on16Mx8,4Banks,4K的參考。 SO - DIMM插槽
文件頁數(shù): 4/11頁
文件大?。?/td> 172K
代理商: HDD16M64B8-13A
HANBit
HDD16M64B8
URL : www.hbe.co.kr 4 HANBit Electronics Co.,Ltd.
REV 1.0 (August. 2002)
PIN FUNCTION DESCRIPTION
Pin
Name
Input Function
CK, /CK
Clock
CK and CK are differential clock inputs. All address and control input signals are
sam-pled on the positive edge of CK and negative edge of CK. Output (read) data
is referenced to both edges of CK. Internal clock signals are derived from CK/CK.
CKE
Clock Enable
CKE HIGH activates, and CKE LOW deactivates internal clock signals, and
device input buffers and output drivers. Deactivating the clock provides
PRECHARGE POWER-DOWN and SELF REFRESH operation (all banks idle), or
ACTIVE POWER-DOWN(row ACTIVE in any bank). CKE is synchronous for all
functions except for disabling outputs, which is achieved asynchronously. Input
buffers, excluding CK, CK and CKE are disabled during power-down and self
refresh modes, providing low standby power. CKE will recognizean LVCMOS
LOW level prior to VREF being stable on power-up.
/CS
Chip Select
CS enables(registered LOW) and disables(registered HIGH) the command
decoder.
All commands are masked when CS is registered HIGH. CS provides for external
bank selection on systems with multiple banks. CS is considered part of the
command code.
A0 ~ A11
Address
Row/column addresses are multiplexed on the same pins.
Row address : RA0 ~ RA11, Column address : CA0 ~ CA9
BA0 ~ BA1
Bank select address
BA0 and BA1 define to which bank an ACTIVE, READ, WRITE or PRE-CHARGE
command is being applied.
/RAS
Row address strobe
Latches row addresses on the positive going edge of the CLK with /RAS low.
Enables row access & precharge.
/CAS
Column
strobe
address
Latches column addresses on the positive going edge of the CLK with /CAS low.
Enables column access.
/WE
Write enable
Enables write operation and row precharge.
Latches data in starting from /CAS, /WE active.
DQS0 ~ 7
Data Strobe
Output with read data, input with write data. Edge-aligned with read data, cen-
tered in write data. Used to capture write data.
DM0~7
Input Data Mask
DM is an input mask signal for write data. Input data is masked when DM is
sampled HIGH along with that input data during a WRITE access. DM is sampled
on both edges of DQS. DM pins include dummy loading internally, to matches the
DQ and DQS load-ing.
DQ0 ~ 63
Data input/output
Data inputs/outputs are multiplexed on the same pins.
VDDQ
Supply
DQ Power Supply : +2.5V
±
0.2V.
VDD
Supply
Power Supply : +2.5V
±
0.2V (device specific).
VSS
Supply
DQ Ground.
VREF
Supply
SSTL_2 reference voltage.
VSPD
Supply
Serial EEPROM Power Supply : 3.3v
VDDID
VDD identification Flag
相關PDF資料
PDF描述
HDD16M64B8-13B DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref. SO-DIMM
HDD16M64D8W DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., DIMM,
HDD16M64D8W-10A DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., DIMM,
HDD16M64D8W-13A DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., DIMM,
HDD16M64D8W-13B DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., DIMM,
相關代理商/技術參數(shù)
參數(shù)描述
HDD16M64B8-13B 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref. SO-DIMM
HDD16M64D8W 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., DIMM,
HDD16M64D8W-10A 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., DIMM,
HDD16M64D8W-13A 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., DIMM,
HDD16M64D8W-13B 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., DIMM,