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參數(shù)資料
| 型號(hào)： | HCTS85D |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened 4-Bit Magnitude Comparator |
| 中文描述： | 輻射加固4位數(shù)值比較 |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大?。?/td> | 214K |
| 代理商： | HCTS85D |
4
Specifications HCTS85MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
An to (A>B)OUT
TPHL,
TPLH
VCC = 4.5V
9
+25
o
C
2
36
ns
10, 11
+125
o
C, -55
o
C
2
43
ns
Bn to (A>B)OUT
TPHL,
TPLH
VCC = 4.5V
9
+25
o
C
2
57
ns
10, 11
+125
o
C, -55
o
C
2
66
ns
An, Bn to (A<B)OUT
TPHL,
TPLH
VCC = 4.5V
9
+25
o
C
2
45
ns
10, 11
+125
o
C, -55
o
C
2
51
ns
An, Bn to (A=B)OUT
TPHL,
TPLH
VCC = 4.5V
9
+25
o
C
2
42
ns
10, 11
+125
o
C, -55
o
C
2
50
ns
An, Bn to (A>B)OUT
TPHL,
TPLH
VCC = 4.5V
9
+25
o
C
2
29
ns
10, 11
+125
o
C, -55
o
C
2
35
ns
(A>B)IN to
(A>B)OUT
TPHL,
TPLH
VCC = 4.5V
9
+25
o
C
2
34
ns
10, 11
+125
o
C, -55
o
C
2
39
ns
(A=B)IN to
(A=B)OUT
TPHL,
TPLH
VCC = 4.5V
9
+25
o
C
2
28
ns
10, 11
+125
o
C, -55
o
C
2
37
ns
(A<B)IN to
(A<B)OUT
TPHL,
TPLH
VCC = 4.5V
9
+25
o
C
2
35
ns
10, 11
+125
o
C, -55
o
C
2
40
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
39
pF
1
+125
o
C, -55
o
C
-
92
pF
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
10
pF
1
+125
o
C, -55
o
C
-
10
pF
Output Transition
Time
TTHL,
TTLH
VCC = 4.5V
1
+25
o
C
-
15
ns
1
+125
o
C, -55
o
C
-
22
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
Spec Number
518624
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